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參數資料
| 型號： | 935245610118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | HC/UH SERIES, 2-INPUT NAND GATE, PDSO5 |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數： | 11/16頁 |
| 文件大小： | 74K |
| 代理商： | 935245610118 |
2002 May 15
4
Philips Semiconductors
Product specication
2-input NAND gate
74HC1G00; 74HCT1G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
see note 1 and 2.
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55
°C the value of P
D derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC1G
74HCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
40
+25
+125
40
+25
+125
°C
tr,tf
input rise and fall times
VCC = 2.0 V
1000
ns
VCC = 4.5 V
500
500
ns
VCC = 6.0 V
400
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+7.0
V
IIK
input diode current
VI <0.5 V or VI > VCC + 0.5 V
±20
mA
IOK
output diode current
VO <0.5 V or VO > VCC + 0.5 V
±20
mA
IO
output source or sink current
0.5 V < VO < VCC + 0.5 V
±12.5 mA
ICC
VCC or GND current
±25
mA
Tstg
storage temperature
65
+150
°C
PD
power dissipation per package
for temperature range from
40 to +125 °C;
note 3
200
mW
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