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參數(shù)資料
| 型號： | 935245640115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | HCT SERIES, 1-INPUT INVERT GATE, PDSO5 |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 935245640115 |
2002 May 17
2
Philips Semiconductors
Product specication
Inverter
74HC1G04; 74HCT1G04
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G04 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G04 provides the inverting buffer. The
standard output currents are half the values compared to
the 74HC/HCT04.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC 1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
tPHL/tPLH
propagation delay A to Y
CL = 15 pF; VCC = 5 V
78ns
CI
input capacitance
1.5
pF
CPD
power dissipation capacitance
notes 1 and 2
16
18
pF
INPUT
OUTPUT
AY
LH
HL
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