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參數(shù)資料
| 型號(hào)： | 935245680125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | HCT SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5 |
| 封裝： | PLASTIC, SC-88A, SOT-353, 5 PIN |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大小： | 78K |
| 代理商： | 935245680125 |
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2002 May 17
2
Philips Semiconductors
Product specication
Bus buffer/line drivers; 3-state
74HC1G125; 74HCT1G125
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability: bus driver.
DESCRIPTION
The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G125 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A HIGH at
pin OE causes the output as assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT125.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC 1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
tPHL/tPLH
propagation delay A to Y
CL = 15 pF; VCC = 5 V
9
10
ns
CI
input capacitance
1.5
pF
CPD
power dissipation capacitance
notes 1 and 2
30
27
pF
INPUTS
OUTPUT
OE
A
Y
LLL
LH
H
HX
Z
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相關(guān)代理商/技術(shù)參數(shù) |
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