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參數(shù)資料
| 型號： | 935250060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | LVC/LCX/Z SERIES, QUAD 2-INPUT OR GATE, PDSO14 |
| 封裝： | 3.90 MM, PLASTIC, SOT-108-1, SO-14 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 85K |
| 代理商： | 935250060112 |
Philips Semiconductors
Product specification
74LVC32A
Quad 2-input OR gate
1997 Jun 30
4
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCC
DC supply voltage (for max. speed performance)
2.7
3.6
V
VCC
DC supply voltage (for low-voltage applications)
1.2
3.6
V
VI
DC input voltage range
0
5.5
V
VO
DC output voltage range; output HIGH or LOW state
0
VCC
V
Tamb
Operating ambient temperature range in free-air
–40
+85
°C
tr, tf
Input rise and fall times
VCC = 1.2 to 2.7V
VCC = 2.7 to 3.6V
0
20
10
ns/V
ABSOLUTE MAXIMUM RATINGS1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +6.5
V
IIK
DC input diode current
VI t 0
–50
mA
VI
DC input voltage
Note 2
–0.5 to +6.5
V
IOK
DC output diode current
VO uVCC or VO t 0
"50
mA
VO
DC output voltage; output HIGH or LOW state
Note 2
–0.5 to VCC +0.5
V
IO
DC output source or sink current
VO = 0 to VCC
"50
mA
IGND, ICC
DC VCC or GND current
"100
mA
Tstg
Storage temperature range
–65 to +150
°C
Power dissipation per package
PTOT
– plastic mini-pack (SO)
above +70
°C derate linearly with 8 mW/K
500
mW
– plastic shrink mini-pack (SSOP and TSSOP)
above +60
°C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
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