參數(shù)資料
型號(hào)： 935262927112
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 通信及網(wǎng)絡(luò)
英文描述： SPECIALTY TELECOM CIRCUIT, PDSO8
封裝： PLASTIC, SOT-96, SO-8
文件頁(yè)數(shù)： 16/18頁(yè)
文件大小： 156K
代理商： 935262927112
1998 Jul 08
7
Philips Semiconductors
Objective specication
SDH/SONET STM1/OC3 transimpedance amplier
TZA3033
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
For typical values Tamb =25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+5.5
V
Vn
DC voltage
pin 3/pad 5: IPhoto
0.5
+2
V
pins 6 and 7/pads 11 and 12: OUT and OUTQ
0.5
VCC + 0.5 V
pad 15: AGC (TZA3033U only)
0.5
VCC + 0.5 V
pin 1/pad 1: DREF
0.5
VCC + 0.5 V
In
DC current
pin 3/pad 5: IPhoto
1
+2.5
mA
pins 6 and 7/pads 11 and 12: OUT and OUTQ
15
+15
mA
pad 15: AGC (TZA3033U only)
0.2
+0.2
mA
pin 1/pad 1: DREF
2.5
+2.5
mA
Ptot
total power dissipation
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
40
+85
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to solder point
tbf
K/W
Rth(j-a)
thermal resistance from junction to ambient
tbf
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
3
5
5.5
V
ICC
supply current
AC coupled; RL =50
37
mA
Ptot
total power dissipation
VCC =5V
185
mW
VCC = 3.3 V
116
mW
Tj
junction temperature
40
+120
°C
Tamb
ambient temperature
40
+25
+85
°C
Rtr
small-signal
transresistance of the
receiver
measured differentially;
AC coupled
RL = ∞
234
k
RL =50
117
k
f3dB(h)
high frequency
3 dB point
Ci = 0.7 pF
120
150
MHz
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