
1999 Oct 14
24
Philips Semiconductors
Product specication
Speech and handsfree IC
TEA1098
Gv(DTMF-RECO)
voltage gain from pin DTMF to
RECO
VDTMF = 50 mV (RMS)
16.5
dB
TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
Gv(HFTX-LN)
voltage gain from pin HFTX to
LN
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
Gv(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
2%
VHFTX(rms)
maximum input voltage at HFTX
(RMS value)
Iline = 70 mA; THD = 2%
95
mV
Vno(LN)
noise output voltage at pin LN;
pin HFTX shorted to GND
through 200
in series with
10
F
psophometrically weighted
(p53 curve)
77.5
dBmp
G
v(mute)
gain reduction if not activated
see Table 2
60
80
dB
RX ampliers
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 8 mV (RMS)
28.7
29.7
30.7
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
Gv(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.3
dB
V
maximum input voltage on IR
(referenced to LN) (RMS value)
Iline = 70 mA; THD = 2%
50
mV
VRECO(rms)(max) maximum output voltage on
RECO (RMS value)
THD = 2%
0.75
0.9
V
Vno(RECO)(rms)
noise output voltage at pin
RECO; pin IR is an open-circuit
(RMS value)
psophometrically weighted
(p53 curve)
88
dBVp
G
v(mute)
gain reduction if not activated
see Table 2
60
80
dB
RX EARPIECE AMPLIFIER (PINS GARX AND QR)
Gv(RECO-QR)
gain voltage range between pins
RECO and QR
3
+15
dB
VQR(rms)(max)
maximum output voltage on QR
(RMS value)
sine wave drive;
RL = 150 ; THD < 2%
0.75
0.9
V
Vno(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit
(RMS value)
Gv(QR) = 0 dB;
psophometrically weighted
(p53 curve)
88
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT