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參數(shù)資料
| 型號： | 935263643551 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 其它接口 |
| 英文描述： | SPECIALTY INTERFACE CIRCUIT, PQFP48 |
| 封裝： | PLASTIC, SOT-313, LQFP-48 |
| 文件頁數(shù)： | 8/31頁 |
| 文件大?。?/td> | 726K |
| 代理商： | 935263643551 |
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1999 Aug 24
16
Philips Semiconductors
Product specication
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
2. Value based on:
a) External modulation current of 60 mA and internal modulation current of 20 mA giving a total modulation current
of 80 mA.
b) Bias current is 100 mA; see Section “Power consumption” for details on application specific power dissipation.
c) Pins AMPADJ and EFADJ are left open-circuit.
d) Pins LA and LAQ both terminated with 33
.
3. See Fig.10 for CML symbol definitions. All CML inputs are terminated internally using 50
on-chip resistors to
ground.
4. Since the TTL inputs are static, no timing specifications are given in this data sheet.
5. The response time is the time it takes the laser currents (ILA and IIBIAS) to fall below 1 mA after pin ALS = HIGH-level.
6. The values are valid for capacitive loads of up to 50 pF connected to these input pins; voltage controlled with 3.9 k
source resistance.
7.
8.
where Imod is the total (internal + external) modulation current.
9. The current converters consist of operational amplifiers used as unity gain amplifiers and current mirrors.
The specified characteristics apply for the transfer function from pin SIMOD to pins LA and LAQ or from pin SIBIAS
to pin IBIAS.
10. Although the operational amplifiers are configured as unity gain amplifiers, the response tends to peak close to the
roll-off area.
11. To suppress supply noise in the band gap, an external capacitor of 10 nF can be connected between this pin and
VEE1.
12. Three series connected diodes have been integrated for measuring the junction temperature. The anode of this diode
array is connected to pin DIOA. The cathode is connected internally to VEE2. With a current of 1 mA, the anode
voltage (measured with reference to VEE2) will be somewhere within the specified range, depending on temperature.
This voltage will show a
6 mV/°C gradient over temperature.
13. Values are measured electrically and unfiltered (see Fig.11):
a) Pins AMPADJ and EFADJ are left open-circuit for all measurements.
b) The external load is 33
on pins LA and LAQ.
c) The external modulation current is 60 mA.
d) Optical rise and fall times, duty factor and jitter depend on the applied filtering and the matching network between
pins LA and LAQ and the optical device used.
14. The currents flowing into pins LA and LAQ are not equal to the internal RF modulation current because of an
additional current in the internal termination resistance.
15. Duty factor is defined as
The data stream should be ‘010101010101...’
16. Rise and fall times are between 10% and 90% of the peak values.
17. All RF tests are done at 2.48832 Gbits/s (STM16/OC48 rate).
18. The DC current into pin IBIAS is not equal to the internal DC current because of an additional current from the internal
termination resistors.
19. To avoid saturation of the current source on pin IBIAS, the voltage level on pin IBIAS should never be allowed to fall
below the specified minimum.
κ
bias
I
IBIAS
I
SIBIAS
------------------
=
κ
mod
I
mod
I
SIMOD
------------------
=
t
WH
T
cy
---------
100%
×
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