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參數(shù)資料
| 型號： | 935264151112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 偏轉(zhuǎn) |
| 英文描述： | VERTICAL DEFLECTION IC, PZIP13 |
| 封裝： | POWER, PLASTIC, SOT-141-6, DIL-BENT-SIL, 13 PIN |
| 文件頁數(shù)： | 15/18頁 |
| 文件大小： | 154K |
| 代理商： | 935264151112 |
1998 Sep 03
6
Philips Semiconductors
Preliminary specication
Full bridge current driven vertical deection
output circuit in LVDMOS
TDA8354Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. When the pin voltage exceeds 70 V the device behaves like a power zener diode thus limiting the voltage.
2. Internally limited by thermal protection; switching point
≈170 °C.
3. Up to VP =18V.
4. At Tj(max).
5. Machine model: equivalent to discharge a 200 pF capacitor through a 0
series resistor. Except pin 7: ±250 V.
6. Human body model: equivalent to discharge a 100 pF capacitor through a 1.5 k
series resistor. Except pin 7:
±1500 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
DC supply
VP
supply voltage
18
V
Vb
yback supply voltage
68
V
Vertical circuit
Io(p-p)
output current (peak-to-peak value)
3.2
A
Vo(A)
output voltage (pin 9)
note 1
68
V
Vo(B)
output voltage (pin 5)
VP
V
I1,2,3,11,12,13
current into or out of
pins 1 to 3 and 11 to 13
20
+20
mA
V1,2,3,11,12,13
peak voltage on pins 1 to 3 and 11 to 13
0.5
VP
V
Flyback switch
Io(Vb)
peak output current
±1.6
A
Thermal data (in accordance with IEC 747-1)
Tstg
storage temperature
55
+150
°C
Tamb
operating ambient temperature
25
+75
°C
Tj
junction temperature
note 2
150
°C
Miscellaneous
tsc
short-circuiting time
note 3
1h
Ii/o
current into any pin
+1.5
×VP(max); note 4
+200
mA
current out of any pin
1.5 ×VP(max); note 4
200
mA
VESD
electrostatic handling
note 5
±300
V
note 6
±2000
V
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