1999 Apr 08
22
Philips Semiconductors
Product specication
Speech and loudspeaker amplier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
TX AUXILIARY AMPLIFIER USING TXAUX (PINS TXAUX AND LN)
Gv(TXAUX-LN)
voltage gain from pin TXAUX to
LN
VTXAUX = 0.1 V (RMS)
11.5
12.5
13.5
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
2%
VTXAUX(rms)
maximum input voltage at
TXAUX (RMS value)
Iline = 70 mA; THD = 2%
1.2
V
Vno(LN)
noise output voltage at pin LN;
pin TXAUX shorted to GND
through 200
in series with
10
F
psophometrically
weighted (p53 curve)
80.5
dBmp
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC
AND TXOUT)
Gv(MIC-TXOUT)
voltage gain from pin MIC+/MIC
to TXOUT
VMIC = 2 mV (RMS)
48.3
49.8
51.3
dB
Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.1
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.35
dB
RX ampliers; see note 1
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS)
28.7
29.7
30.7
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
Gv(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.3
dB
VIR(rms)(max)
maximum input voltage on IR
(referenced to LN) (RMS value)
Iline = 70 mA; THD = 2%
50
mV
VRECO(rms)(max)
maximum output voltage on pin
RECO (RMS value)
THD = 2%
0.75
0.9
V
Vno(RECO)(rms)
noise output voltage at pin
RECO; pin IR is an open-circuit
(RMS value)
psophometrically
weighted (p53 curve)
88
dBVp
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT