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參數(shù)資料
| 型號： | 935264824112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | CBT/FST/QS/5C/B SERIES, 10 1-BIT DRIVER, TRUE OUTPUT, PDSO24 |
| 封裝： | PLASTIC, SOT-355, TSSOP-24 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 110K |
| 代理商： | 935264824112 |
Philips Semiconductors
Product specification
CBT6800
10-bit bus switch with precharged outputs
for live insertion
1999 Oct 28
4
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Tamb = –40°C to +85°C
UNIT
Min
Typ1
Max
VIK
Input clamp voltage
VCC = 4.5 V; II = –18 mA
–1.2
V
II
Input leakage current – OE
VCC = 5.5 V; VI = GND or 5.5 V
±5
A
IO
Output bias current
VCC = 4.5 V; BiasV = 2.4 V; VO = 0
0.25
mA
ICC
Quiescent supply current
VCC = 5.5 V; IO = 0, VI = VCC or GND
50
A
ICC
Control pins2
VCC = 5.5 V, one input at 3.4 V, other inputs at VCC or GND
2.5
mA
CI
Control pins
VI= 3 V or 0
3.5
pF
CO(OFF)
Off-state capacitance – I/O pins
VO = 3 V or 0; switch off
8.2
pF
3
VCC = 4.5 V; VI = 0 V; II = 64 mA
5
7
ron3
On-resistance
VCC = 4.5 V; VI = 0 V; II = 30 mA
5
7
VCC = 4.5 V; VI = 2.4 V; II = 15 mA
10
15
VP
Pass gate voltage
VIN = VCC = 5.0 V, IOUT = –100 A
3.4
3.6
3.9
V
NOTES:
1. All typical values are at VCC = 5 V, Tamb = 25°C
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On–state resistance is
determined by the lowest voltage of the two (A or B) terminals.
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