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參數(shù)資料
| 型號： | 935266674118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 編、解碼器及復用、解復用 |
| 英文描述： | 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, PDSO8 |
| 封裝： | 3.90 MM, PLASTIC, MS-012, SOT-96-1, SO-8 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 935266674118 |
Philips Semiconductors
Product data
PCA9540
2-channel I2C multiplexer
2002 May 13
8
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
DC supply voltage
–0.5 to +7.0
V
VI
DC input voltage
–0.5 to +7.0
V
II
DC input current
±20
mA
IO
DC output current
±25
mA
IDD
Supply current
±100
mA
ISS
Supply current
±100
mA
Ptot
total power dissipation
400
mW
Tstg
Storage temperature range
–60 to +150
°C
Tamb
Operating ambient temperature
–40 to +85
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
DC CHARACTERISTICS
VDD = 2.3 to 3.6 V; VSS = 0 V; Tamb = –40 to +85 °C; unless otherwise specified. (See page 9 for VDD = 3.6 to 5.5 V)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDD
Supply voltage
2.3
—
3.6
V
IDD
Supply current
Operating mode; VDD = 3.6 V;
no load; VI = VDD or VSS;
fSCL = 100 kHz
—
50
100
A
Istb
Standby current
Standby mode; VDD = 3.6 V;
no load; VI = VDD or VSS; fSLC = 0 kHz
—
20
100
A
VPOR
Power-on reset voltage
no load; VI = VDD or VSS
—
1.6
2.1
V
Input SCL; input/output SDA
VIL
LOW level input voltage
–0.5
—
0.3 VDD
V
VIH
HIGH level input voltage
0.7 VDD
—
6
V
IO
LOW level output current
VOL = 0.4 V
3
—
mA
IOL
LOW level output current
VOL = 0.6 V
6
—
mA
IL
Leakage current
VI = VDD or VSS
–1
—
+1
A
Ci
Input capacitance
VI = VSS
—
7
8
pF
Pass Gate
RO
Switch resistance
VCC = 3.0 to 3.6 V, VO = 0.4 V, IO = 15 mA
5
20
31
RON
Switch resistance
VCC = 2.3 to 2.7 V, VO = 0.4 V, IO = 10 mA
7
26
55
Vswin = VDD = 3.3 V; Iswout = –100 A
—
2.2
—
V
Switch output voltage
Vswin = VDD = 3.0 to 3.6 V; Iswout = –100 A
1.6
—
2.8
V
VPass
Switch output voltage
Vswin = VDD = 2.5 V; Iswout = –100 A
—
1.5
—
V
Vswin = VDD = 2.3 to 2.7 V; Iswout = –100 A
1.1
—
2.0
IL
Leakage current
VI = VDD or VSS
–1
—
+1
A
Cio
Input/output capacitance
VI = VSS
—
2.5
5
pF
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