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參數(shù)資料
| 型號： | 935266681115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | LVC/LCX/Z SERIES, 1-INPUT NON-INVERT GATE, PDSO5 |
| 封裝： | PLASTIC, SC-88A, 5 PIN |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 137K |
| 代理商： | 935266681115 |
2003 Mar 07
2
Philips Semiconductors
Product specication
Buffer with open-drain output
74LVC1G07
FEATURES
Wide supply voltage range from 1.65 to 5.5 V
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
Specified from 40 to +85 °C and 40 to +125 °C.
DESCRIPTION
The 74LVC1G07 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
The input can be driven from either 3.3 or 5 V devices.
This feature allows the use of this device as translator in a
mixed 3.3 and 5 V environment.
Schmitt trigger action at the input makes the circuit tolerant
for slower input rise and fall time.
The 74LVC1G07 provides the non-inverting buffer.
The output of the device is an open drain and can be
connected to other open-drain outputs to implement
active-LOW wired-OR or active-HIGH wired-AND
functions.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPLZ/tPZL
propagation delay inputs A to output Y
VCC = 1.8 V; CL = 30 pF; RL =1k
2.6
ns
VCC = 2.5 V; CL = 30 pF; RL = 500
1.7
ns
VCC = 2.7 V; CL = 50 pF; RL = 500
2.3
ns
VCC = 3.3 V; CL = 50 pF; RL = 500
2.2
ns
VCC = 5.0 V; CL = 50 pF; RL = 500
1.6
ns
CI
input capacitance
5
pF
CPD
power dissipation capacitance per gate
VCC = 3.3 V; notes 1 and 2
7
pF
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