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參數(shù)資料
| 型號(hào)： | 935267940112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 網(wǎng)絡(luò)接口 |
| 英文描述： | DATACOM, INTERFACE CIRCUIT, PDSO14 |
| 封裝： | 3.90 MM, PLASTIC, SOT-108-1, MS-012, SO-14 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 120K |
| 代理商： | 935267940112 |
Philips Semiconductors
Product data
AU5790
Single wire CAN transceiver
2001 May 18
6
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to
pin 8 (GND); positive currents flow into the IC, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VBAT
Supply voltage
Steady state
–0.3
+27
V
VBATld
Short-term supply voltage
Load dump; ISO7637/1 test pulse 5
(SAE J1113, test pulse 5), T < 1s
+40
V
VBATtr2
Transient supply voltage
ISO 7637/1 test pulse 2 (SAE J1113,
test pulse 2), with series diode and
bypass cap of 100 nF between BAT and
GND pins, Note 2.
+100
V
VBATtr3
Transient supply voltage
ISO 7637/1 pulses 3a and 3b
(SAE J1113 test pulse 3a and 3b),
Note 2.
–150
+100
V
VCANH_1
CANH voltage
VBAT > 2 V
–10
+18
V
VCANH_0
CANH voltage
VBAT < 2 V
–16
+18
V
VCANHtr1
Transient bus voltage
ISO 7637/1 test pulse 1, Notes 1 and 2
–100
V
VCANHtr2
Transient bus voltage
ISO 7637/1 test pulse 2, Notes 1 and 2
+100
V
VCANHtr3
Transient bus voltage
ISO 7637/1 test pulses 3a, 3b,
Notes 1 and 2
–150
+100
V
VRTH1
Pin RTH voltage
VBAT > 2 V, voltage applied to pin RTH
via a 2 k
series resistor
–10
+18
V
VRTH0
Pin RTH voltage
VBAT < 2 V, voltage applied to pin RTH
via a 2 k
series resistor
–16
+18
V
VI
DC voltage on pins TxD, EN, RxD, NSTB
–0.3
+7
V
ESDBAHB
ESD capability of pin BAT
Direct contact discharge,
R=1.5 k
, C=100 pF
–8
+8
kV
ESDCHHB
ESD capability of pin CANH
Direct contact discharge,
R=1.5 k
, C=100 pF
–8
+8
kV
ESDRTHB
ESD capability of pin RTH
Direct contact discharge,
R=1.5 k
+ 3 k, C=100 pF
–8
+8
kV
ESDLGHB
ESD capability of pins TxD, NSTB, EN, RxD, and
RTH
Direct contact discharge,
R=1.5 k
, C=100 pF
–2
+2
kV
RTmin
Bus load resistance RT being connected to pin
RTH
2
k
Tamb
Operating ambient temperature
–40
+125
°C
Tstg
Storage temperature
–40
+150
°C
Tvj
Junction temperature
–40
+150
°C
NOTES:
1. Test pulses are coupled to CANH through a series capacitance of 1 nF.
2. Rise time for test pulse 1: tr < 1 s; pulse 2: tr < 100 ns; pulses 3a/3b: tr < 5 ns.
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