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參數(shù)資料
| 型號(hào)： | 935272009125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | HCT SERIES, 2-INPUT OR GATE, PDSO5 |
| 封裝： | PLASTIC, SC-74A, 5 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 73K |
| 代理商： | 935272009125 |
2002 May 15
2
Philips Semiconductors
Product specication
2-input OR gate
74HC1G32; 74HCT1G32
FEATURES
Wide operating voltage from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS
device.
The 74HC1G/HCT1G32 provides the 2-input OR function.
The standard output currents are 1/2 compared to the
74HC/HCT32.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. For HC1G the conditions is VI = GND to VCC.
For HCT1G the conditions is VI = GND to VCC 1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
tPHL/tPLH
propagation delay A and B to Y
CL = 15 pF; VCC = 5 V
8
10
ns
CI
input capacitance
1.5
pF
CPD
power dissipation capacitance
notes 1 and 2
19
20
pF
INPUTS
OUTPUT
AB
Y
LLL
LH
H
HLH
HHH
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