參數(shù)資料
型號： 93AA56XT-I/SN
元件分類： PROM
英文描述： 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, PLASTIC, SOIC-8
文件頁數(shù)： 6/13頁
文件大小： 102K
代理商： 93AA56XT-I/SN
93AA46/56/66
DS20067H-page 2
1998 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
1.1
Maximum Ratings
VCC ............................................................................ 7.0V
All inputs and outputs w.r.t. VSS .......... -0.6V to VCC +1.0V
Storage temperature ................................-65C to +150C
Ambient temp. with power applied ...........-65C to +125C
Soldering temperature of leads (10 seconds)........+300C
ESD protection on all pins ......................................... 4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specication is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
VSS
Ground
ORG
Memory Conguration
NU
Not Utilized
VCC
Power Supply
TABLE 1-2:
DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +1.8V to +5.5V Commercial (C): Tamb = 0C to +70C
Industrial (I): Tamb = -40
°C to +85°C
Parameter
Symbol
Min
Typ
Max
Units
Conditions
High level input voltage
VIH1
2.0
—
VCC+1
V
VCC
≥ 2.7V
VIH2
0.7 VCC
—VCC+1
V
VCC < 2.7V
Low level input voltage
VIL1
-0.3
—
0.8
V
VCC
≥ 2.7V
VIL2
-0.3
—
0.2 VCC
VVCC < 2.7V
Low level output voltage
VOL1
—
0.4
V
IOL = 2.1 mA; VCC = 4.5V
VOL2
—
0.2
V
IOL = 100
A; VCC = 1.8V
High level output voltage
VOH1
2.4
—
V
IOH = -400
A; VCC = 4.5V
VOH2VCC-0.2
—
V
IOH = -100
A; VCC = 1.8V
Input leakage current
ILI
-10
—
10
AVIN = 0.1V to VCC
Output leakage current
ILO
-10
—
10
AVOUT = 0.1V to VCC
Pin capacitance
(all inputs/outputs)
CIN, COUT
——
7
pF
VIN/VOUT = 0V (Note 1 & 2)
Tamb = +25C, FCLK = 1 MHz
Operating current
ICC write
—
3
mA
FCLK=2 MHz; VCC=5.5V (Note 2)
ICC read
—
70
1
500
mA
A
FCLK = 2 MHz; VCC = 5.5V
FCLK = 1 MHz; VCC = 3.0V
FCLK = 1 MHz; VCC = 1.8V
Standby current
ICCS
2
100
30
A
CLK = CS = 0V; VCC = 5.5V
CLK = CS = 0V; VCC = 3.0V
CLK = CS = 0V; VCC = 1.8V
ORG, DI = VSS or VCC
Clock frequency
FCLK
2
1
MHz
VCC
≥ 4.5V
VCC < 4.5V
Clock high time
TCKH
250
ns
Clock low time
TCKL
250
ns
Chip select setup time
TCSS
50
ns
Relative to CLK
Chip select hold time
TCSH
0
ns
Relative to CLK
Chip select low time
TCSL
250
ns
Data input setup time
TDIS
100
ns
Relative to CLK
Data input hold time
TDIH
100
ns
Relative to CLK
Data output delay time
TPD
400
ns
CL = 100 pF
Data output disable time
TCZ
100
ns
CL = 100 pF (Note 2)
Status valid time
TSV
500
ns
CL = 100 pF
Program cycle time
TWC
4
10
ms
ERASE/WRITE mode
TEC
8
15
ms
ERAL mode (Vcc = 5V
± 10%)
TWL
16
30
ms
WRAL mode (Vcc = 5V
± 10%)
Endurance
—
1M
—
1M
—
25
°C, Vcc = 5.0V, Block Mode
Note 1: This parameter is tested at Tamb = 25
°C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specic
application, please consult the Total Endurance Model which can be obtained on our website.
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