參數(shù)資料
型號: 93C46B-P
廠商: Microchip Technology Inc.
元件分類: EEPROM
英文描述: 1K 5.0V Microwire Serial EEPROM
中文描述: 一千5.0V微型導(dǎo)線串行EEPROM
文件頁數(shù): 2/12頁
文件大?。?/td> 180K
代理商: 93C46B-P
93C46B
DS21172D-page 2
Preliminary
1997 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
V
All inputs and outputs w.r.t. V
Storage temperature .....................................-65
Ambient temp. with power applied.................-65
Soldering temperature of leads (10 seconds).............+300
ESD protection on all pins................................................4 kV
CC
...................................................................................7.0V
SS
...............-0.6V to V
CC
+1.0V
°
°
C to +150
C to +125
°
°
°
C
C
C
*Notice:
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
Stresses above those listed under “Maximum ratings” may
TABLE 1-1
PIN FUNCTION TABLE
Name
Function
CS
CLK
DI
DO
V
SS
NC
V
CC
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
No Connect
Power Supply
TABLE 1-2
DC AND AC ELECTRICAL CHARACTERISTICS
All parameters apply over the
specified operating ranges
unless otherwise noted
Commercial (C)
Industrial (I)
Automotive (E)
V
V
V
CC
CC
CC
= +4.5V to +5.5V Tamb = 0
= +4.5V to +5.5V Tamb = -40
= +4.5V to +5.5V Tamb = -40
°
C to +70
°
C to +85
°
C to +125
°
C
°
C
°
C
Parameter
Symbol
Min.
Max.
Units
Conditions
High level input voltage
Low level input voltage
Low level output voltage
High level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
V
V
V
V
I
I
IH
2.0
-0.3
2.4
-10
-10
V
CC
0.8
0.4
10
10
+1
V
V
V
V
μ
μ
(Note 2)
IL
OL
I
I
V
V
V
Tamb = +25
OL
= 2.1 mA; V
= -400
= V
SS
= V
/V
OUT
CC
= 4.5V
= 4.5V
OH
OH
μ
A; V
CC
LI
A
A
IN
to V
to V
= 0 V (Notes 1 & 2)
°
C, F
CLK
CC
LO
OUT
SS
CC
C
IN
, C
OUT
7
pF
IN
= 1 MHz
I
CC
read
1
mA
Operating current
Standby current
Clock frequency
Clock high time
Clock low time
Chip select setup time
Chip select hold time
Chip select low time
Data input setup time
Data input hold time
Data output delay time
Data output disable time
Status valid time
I
CC
write
250
250
50
0
250
100
100
1M
°
C and F
1.5
1
2
400
100
500
2
6
15
= 1 MHz.
mA
μ
A
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
cycles
I
F
T
T
T
T
T
T
T
T
T
T
T
T
T
CCS
CS = V
V
CC
SS
CLK
= 4.5V
CKH
CKL
CSS
Relative to CLK
Relative to CLK
CSH
CSL
DIS
Relative to CLK
Relative to CLK
C
L
= 100 pF
C
L
= 100 pF (Note 2)
C
L
= 100 pF
ERASE/WRITE mode
ERAL mode
WRAL mode
25
°
C, V
CC
= 5.0V, Block Mode (Note 3)
DIH
PD
CZ
SV
Program cycle time
WC
EC
WL
Endurance
Note 1:
This parameter is tested at Tamb = 25
This parameter is periodically sampled and not 100% tested.
This application is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which may be obtained on Microchip’s BBS or website.
CLK
2:
3:
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