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參數(shù)資料
| 型號(hào)： | 93C46B-SM |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | EEPROM |
| 英文描述： | 1K 5.0V Microwire Serial EEPROM |
| 中文描述： | 一千5.0V微型導(dǎo)線串行EEPROM |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 180K |
| 代理商： | 93C46B-SM |
93C46B
DS21172D-page 4
Preliminary
1997 Microchip Technology Inc.
3.0
FUNCTIONAL DESCRIPTION
Instructions, addresses and write data are clocked into
the DI pin on the rising edge of the clock (CLK). The DO
pin is normally held in a HIGH-Z state except when
reading data from the device, or when checking the
READY/BUSY status during a programming operation.
The READY/BUSY status can be verified during an
ERASE/WRITE operation by polling the DO pin; DO
low indicates that programming is still in progress, while
DO high indicates the device is ready. The DO will enter
the HIGH-Z state on the falling edge of the CS.
3.1
START Condition
The START bit is detected by the device if CS and DI
are both high with respect to the positive edge of CLK
for the first time.
Before a START condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper-
ation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,
and WRAL). As soon as CS is high, the device is no
longer in the standby mode.
An instruction following a START condition will only be
executed if the required amount of opcodes,
addresses, and data bits for any particular instruction is
clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new START condition is
detected.
3.2
Data In (DI) and Data Out (DO)
It is possible to connect the Data In (DI)and Data Out
(DO) pins together. However, with this configuration, if
A0 is a logic-high level, it is possible for a “bus conflict”
to occur during the “dummy zero” that precedes the
READ operation. Under such a condition, the voltage
level seen at DO is undefined and will depend upon the
relative impedances of DO and the signal source driv-
ing A0. The higher the current sourcing capability of A0,
the higher the voltage at the DO pin.
3.3
Data Protection
During power-up, all programming modes of operation
are inhibited until Vcc has reached a level greater than
3.8V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
Vcc has fallen below 3.8V at nominal conditions.
The ERASE/SRITE Disable (EWDS) and ERASE/
WRITE Enable (EWEN) commands give additional pro-
tection against accidental programming during normal
operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
FIGURE 3-1:
SYNCHRONOUS DATA TIMING
CS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
CLK
DI
DO
(READ)
DO
(PROGRAM)
T
CSS
T
DIS
T
CKH
T
CKL
T
DIH
T
PD
T
CSH
T
PD
T
CZ
STATUS VALID
T
SV
T
CZ
Note:
AC test conditions: V
IL
= 0.4V, V
IH
= 2.4V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C46B-SN | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K 5.0V Microwire Serial EEPROM |
| 93C46B-ST | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K 5.0V Microwire Serial EEPROM |
| 93C46BT-/SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
| 93C46BT/SN | 功能描述:電可擦除可編程只讀存儲(chǔ)器 64x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C46BT-/SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
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