參數(shù)資料
型號: 93C56BP
廠商: Microchip Technology Inc.
元件分類: EEPROM
英文描述: 2K Microwire Compatible Serial EEPROM
中文描述: 2K微絲兼容串行EEPROM
文件頁數(shù): 7/12頁
文件大?。?/td> 252K
代理商: 93C56BP
1998 Microchip Technology Inc.
Preliminary
DS21206B-page 7
93C56A/B
3.8
WRITE
The WRITE instruction is followed by 8-bits (93C56A)
16-bits (93C56B) of data which are written into the
specified address. After the last data bit is clocked into
the DI pin, the self-timed auto-erase and programming
cycle begins.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruc-
tion.
3.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and com-
mences at the rising clock edge of the last data bit.
Clocking of the CLK pin is not necessary after the
device has entered the WRAL cycle. The WRAL com-
mand does include an automatic ERAL cycle for the
device. Therefore, the WRAL instruction does not
require an ERAL instruction but the chip must be in the
EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
FIGURE 3-7:
WRITE TIMING
FIGURE 3-8:
WRAL TIMING
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
BUSY
READY
HIGH-Z
HIGH-Z
Twc
T
CSL
T
CZ
T
SV
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
T
CSL
T
SV
T
CZ
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