參數(shù)資料
型號: 93C56BST
廠商: Microchip Technology Inc.
元件分類: EEPROM
英文描述: 2K Microwire Compatible Serial EEPROM
中文描述: 2K微絲兼容串行EEPROM
文件頁數(shù): 5/12頁
文件大小: 252K
代理商: 93C56BST
1998 Microchip Technology Inc.
Preliminary
DS21206B-page 5
93C56A/B
3.4
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. This cycle begins
on the rising clock edge of the last address bit.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
3.5
Erase All (ERAL)
The ERAL instruction will erase the entire memory
array to the logical “1” state. The ERAL cycle is identical
to the ERASE cycle, except for the different opcode.
The ERAL cycle is completely self-timed and com-
mences at the rising clock edge of the last address bit.
Clocking of the CLK pin is not necessary after the
device has entered the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire ERAL cycle is com-
plete.
FIGURE 3-2:
ERASE TIMING
FIGURE 3-3:
ERAL TIMING
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
1
1
A
N
A
N
-1
A
N
-2
A0
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
WC
HIGH-Z
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
0
0
1
0
X
X
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
EC
HIGH-Z
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