參數(shù)資料
型號(hào)： 93C76-SN
廠商： Microchip Technology Inc.
英文描述： 8K/16K 5.0V Microwire Serial EEPROM
中文描述： 8K/16K 5.0V Microwire串行EEPROM的
文件頁數(shù)： 3/12頁
文件大?。?/td> 84K
代理商： 93C76-SN
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 3
93C76/86
TABLE 1-3:
AC CHARACTERISTICS
TABLE 1-4:
INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)
TABLE 1-5:
INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +4.5V to +5.5V
Commercial (C):
Tamb = 0
°
C to -40
°
C
Industrial (I):
Tamb = -40
°
C to +85
°
C
Automotive (E):
Tamb = -40
°
C to +125
°
C
Parameter
Symbol
Clock frequency
F
CLK
Clock high time
T
CKH
Clock low time
T
CKL
Chip select setup time
T
CSS
Chip select hold time
T
CSH
Chip select low time
T
CSL
Data input setup time
T
DIS
Data input hold time
T
DIH
Data output delay time
T
PD
Data output disable time
T
CZ
Status valid time
T
SV
Program cycle time
T
WC
T
EC
T
WL
Endurance
—
Min.
—
300
200
50
0
250
100
100
—
—
—
—
—
—
10M
Max.
2
—
—
—
—
—
—
—
400
100
500
10
15
30
—
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
cycles
Conditions
Vcc
≥
4.5V
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
C
L
= 100 pF
(Note 1)
C
L
= 100 pF
ERASE/WRITE mode (Note 2)
ERAL mode
WRAL mode
25
°
C, V
CC
= 5.0V, Block Mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
Data In
—
—
—
—
D15 - D0
D15 - D0
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK Cycles
29
13
13
13
29
29
13
X A8 A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X X X
X A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X X X
X A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X X X
0 0 X X X X X X X X
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
22
14
14
14
22
22
14
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1
1
1
1
1
1
1
10
00
11
00
01
00
00
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X X X X
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X X X X
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X X X X
0 0 X X X X X X X X X
—
—
—
—
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
D7 - D0
D7 - D0
—
相關(guān)PDF資料
PDF描述
93C86 16K 5.0V Microwire Serial EEPROM(4.5~5.5V,16K位,10M次擦寫周期,具上掉電數(shù)據(jù)保護(hù)電路,EEPROM)
93C86-ESN 8K/16K 5.0V Microwire Serial EEPROM
93C86-IP 8K/16K 5.0V Microwire Serial EEPROM
93C86-ISN Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205
93C86-P MATRIX ITEMS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
93C76T-/P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM
93C76T-/SN 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM
93C76T-E/P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM
93C76T-E/SN 功能描述:電可擦除可編程只讀存儲(chǔ)器 516x8 Or 1024x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
93C76T-I/P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM
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