參數(shù)資料
型號: 93C76CT-I/MC
元件分類: PROM
英文描述: 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 2 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8
文件頁數(shù): 27/28頁
文件大小: 518K
代理商: 93C76CT-I/MC
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
DS21796K-page 8
2008 Microchip Technology Inc.
2.8
Write
The WRITE instruction is followed by 8 bits (if ORG is
low or A-version devices) or 16 bits (if ORG pin is high
or B-version devices) of data which are written into the
specified address. The self-timed auto-erase and
programming cycle is initiated by the rising edge of CLK
on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
FIGURE 2-6:
WRITE TIMING
Note:
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
Note:
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
1
0
1
AN
A0
Dx
D0
Busy
Ready
High-Z
TWC
TCSL
TCZ
TSV
相關PDF資料
PDF描述
93AA76CT-I/MC 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93C76AT-I/OTG 1K X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6
93C76CT-E/ST 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC76B-E/SN 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC76BT-I/SN 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
相關代理商/技術參數(shù)
參數(shù)描述
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93C76-E/SN 功能描述:電可擦除可編程只讀存儲器 516x8 Or 1024x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
93C76-EP 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM
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93C76-I/P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM