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參數(shù)資料
| 型號： | 93LC46-SN |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 1K/2K/4K 2.0V Microwire Serial EEPROM |
| 中文描述： | 1K/2K/4K 2.0V的微型導(dǎo)線串行EEPROM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 222K |
| 代理商： | 93LC46-SN |
93LC46/56/66
DS11168L-page 6
1997 Microchip Technology Inc.
3.4
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
The ERASE cycle takes 4 ms per word (Typical).
3.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical “1” state. The ERAL cycle
is identical to the ERASE cycle except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS. Clocking of
the CLK pin is not necessary after the device has
entered the self clocking mode. The ERAL instruction is
guaranteed at Vcc = +4.5V to +6.0V.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire write cycle is complete.
The ERAL cycle takes 15 ms maximum (8 ms typical).
FIGURE 3-2:
ERASE TIMING
FIGURE 3-3:
ERAL TIMING
CLK
CS
T
CSL
1
DI
An
BUSY
A0
READY
T
WC
DO
1
1
CHECK STATUS
STANDBY
T
CZ
TRI-STATE
T
SV
TRI-STATE
An-1
An-2
CLK
CS
T
CSL
0
DI
0
BUSY
0
READY
T
EC
DO
1
1
CHECK STATUS
STANDBY
T
CZ
TRI-STATE
T
SV
TRI-STATE
Guarantee at Vcc = +4.5V to +6.0V.
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| 93LC46A-ISN | 1K 2.5V Microwire Serial EEPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC46T | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.5V Microwire Serial EEPROM |
| 93LC46T/SN | 功能描述:電可擦除可編程只讀存儲器 128x8 Or 64x16 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC46T-I/P | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.5V Microwire Serial EEPROM |
| 93LC46T-I/SN | 功能描述:電可擦除可編程只讀存儲器 128x8 Or 64x16 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC46X | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.5V Microwire Serial EEPROM |
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