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參數(shù)資料
| 型號(hào)： | 93LC66B |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 4K 2.5V Microwire Serial EEPROM(4K位,2.5V,具上掉電數(shù)據(jù)保護(hù)電路,Microwire接口EEPROM) |
| 中文描述： | 4K的Microwire串行EEPROM的為2.5V（4K的位，2.5伏，具上掉電數(shù)據(jù)保護(hù)電路，微型導(dǎo)線接口的EEPROM） |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | 93LC66B |
93LC66A/B
1997 Microchip Technology Inc.
Preliminary
DS21209A-page 5
3.4
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
3.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical “1” state. The ERAL cycle
is identical to the ERASE cycle except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS. Clocking of
the CLK pin is not necessary after the device has
entered the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire ERAL cycle is com-
plete.
FIGURE 3-2:
ERASE TIMING
FIGURE 3-3:
ERAL TIMING
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
1
1
A
N
A
N
-1
A
N
-2
A0
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
WC
HIGH-Z
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
0
0
1
0
X
X
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
EC
HIGH-Z
Guaranteed at Vcc = 4.5V to +6.0V.
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| 93LC66A | 4K 2.5V Microwire Serial EEPROM(4K位,2.5V,具上掉電數(shù)據(jù)保護(hù)電路,Microwire接口EEPROM) |
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| 93LC56 | 2K 2.0V CMOS Serial EEPROM(2K位,2.0V,具上掉電數(shù)據(jù)保護(hù)電路,EEPROM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC66B/P | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66B-/P | 制造商:Microchip Technology 功能描述:4k(256~16) 2MHz 2.5V to 5.5V VA / Microwire 8DIP 制造商:Microchip Technology 功能描述:4k(256~16) 2MHz 2.5V to 5.5V VA / Microwire 8DIP Bulk |
| 93LC66B/P | 制造商:Microchip Technology Inc 功能描述:IC EEPROM SERIAL 4K 93LC66 DIP8 |
| 93LC66B/SN | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66B/SN | 制造商:Microchip Technology Inc 功能描述:IC EEPROM SERIAL 4K 93LC66 SOIC8 |
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