參數(shù)資料
型號(hào): 9926A
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 雙N溝道MOSFET的為2.5V指定的PowerTrench
文件頁數(shù): 1/5頁
文件大?。?/td> 121K
代理商: 9926A
March 2005
2005 Fairchild Semiconductor Corporation
FDW9926A Rev E(W)
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
Battery protection
Load switch
Power management
Features
4.5 A, 20 V.
R
DS(ON)
= 32 m
@ V
GS
= 4.5 V
R
DS(ON)
= 45 m
@ V
GS
= 2.5 V
Optimized for use in battery circuit applications
Extended V
GSS
range (
±
10V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation
Ratings
20
±
12
4.5
30
1.0
0.6
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
9926A
FDW9926A
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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