2-20 Revision 13 Detailed I/O DC Characteristics Table 2-18 Input Capacitance Symbol Definition" />
    參數(shù)資料
    型號(hào): A3PE600-PQ208
    廠商: Microsemi SoC
    文件頁數(shù): 91/162頁
    文件大?。?/td> 0K
    描述: IC FPGA 600000 GATES 208-PQFP
    標(biāo)準(zhǔn)包裝: 24
    系列: ProASIC3E
    RAM 位總計(jì): 110592
    輸入/輸出數(shù): 147
    門數(shù): 600000
    電源電壓: 1.425 V ~ 1.575 V
    安裝類型: 表面貼裝
    工作溫度: 0°C ~ 70°C
    封裝/外殼: 208-BFQFP
    供應(yīng)商設(shè)備封裝: 208-PQFP(28x28)
    ProASIC3E DC and Switching Characteristics
    2-20
    Revision 13
    Detailed I/O DC Characteristics
    Table 2-18 Input Capacitance
    Symbol
    Definition
    Conditions
    Min.
    Max.
    Units
    CIN
    Input capacitance
    VIN = 0, f = 1.0 MHz
    8
    pF
    CINCLK
    Input capacitance on the clock pin
    VIN = 0, f = 1.0 MHz
    8
    pF
    Table 2-19 I/O Output Buffer Maximum Resistances1
    Standard
    Drive Strength
    RPULL-DOWN ()2
    RPULL-UP ()3
    3.3 V LVTTL / 3.3 V LVCMOS
    4 mA
    100
    300
    8 mA
    50
    150
    12 mA
    25
    75
    16 mA
    17
    50
    24 mA
    11
    33
    3.3 V LVCMOS Wide Range
    100 A
    Same as regular
    3.3 V LVCMOS
    Same as regular
    3.3 V LVCMOS
    2.5 V LVCMOS
    4 mA
    100
    200
    8 mA
    50
    100
    12 mA
    25
    50
    16 mA
    20
    40
    24 mA
    11
    22
    1.8 V LVCMOS
    2 mA
    200
    225
    4 mA
    100
    112
    6 mA
    50
    56
    8 mA
    50
    56
    12 mA
    20
    22
    16 mA
    20
    22
    1.5 V LVCMOS
    2 mA
    200
    224
    4 mA
    100
    112
    6 mA
    67
    75
    8 mA
    33
    37
    12 mA
    33
    37
    3.3 V PCI/PCI-X
    Per PCI/PCI-X
    specification
    25
    75
    3.3 V GTL
    20 mA 4
    11
    2.5 V GTL
    20 mA 4
    14
    Notes:
    1. These maximum values are provided for informational reasons only. Minimum output buffer resistance
    values depend on VCCI, drive strength selection, temperature, and process. For board design
    considerations and detailed output buffer resistances, use the corresponding IBIS models located on the
    Microsemi SoC Products Group website at www.microsemi.com/soc/techdocs/models/ibis.html.
    2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
    3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
    4. Output drive strength is below JEDEC specification.
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