2-4 Revision 11 Internal Power-Up Activation Sequence 1. Core 2. Input buffers 3. Output buf" />
參數(shù)資料
型號: A3PN060-2VQG100I
廠商: Microsemi SoC
文件頁數(shù): 25/114頁
文件大?。?/td> 0K
描述: IC FPGA NANO 60K GATES 100-VQFP
標準包裝: 90
系列: ProASIC3 nano
RAM 位總計: 18432
輸入/輸出數(shù): 71
門數(shù): 60000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-TQFP
供應商設備封裝: 100-VQFP(14x14)
ProASIC3 nano DC and Switching Characteristics
2-4
Revision 11
Internal Power-Up Activation Sequence
1. Core
2. Input buffers
3. Output buffers, after 200 ns delay from input buffer activation
Figure 2-1 I/O State as a Function of VCCI and VCC Voltage Levels
Region 1: I/O buffers are OFF
Region 2: I/O buffers are ON.
I/Os are functional but slower because
VCCI / VCC are below specification.
For the same reason, input
buffers do not meet VIH / VIL levels, and
output buffers do not meet VOH / VOL levels.
Min VCCI datasheet specification
voltage at a selected I/O
standard; i.e., 1.425 V or 1.7 V
or 2.3 V or 3.0 V
VCC
VCC = 1.425 V
Region 1: I/O Buffers are OFF
Activation trip point:
Va = 0.85 V ± 0.25 V
Deactivation trip point:
Vd = 0.75 V ± 0.25 V
Activation trip point:
Va = 0.9 V ± 0.3 V
Deactivation trip point:
Vd = 0.8 V ± 0.3 V
VCC = 1.575 V
Region 5: I/O buffers are ON
and power supplies are within
specification.
I/Os meet the entire datasheet
and timer specifications for
speed, VIH / VIL , VOH / VOL , etc.
Region 4: I/O
buffers are ON.
I/Os are functional
but slower because VCCI
is below specification. For the
same reason, input buffers do
not meet VIH / VIL levels, and output
buffers do not meet VOH/VOL levels.
where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCCI
Region 3: I/O buffers are ON.
I/Os are functional; I/O DC
specifications are met,
but I/Os are slower because
the VCC is below specification.
VCC = VCCI + VT
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