1-2 Revision 11 Security, built into the FPGA fabric, is an inherent component of ProASIC3 nano devices. The flash c" />
參數(shù)資料
型號(hào): A3PN250-VQ100
廠商: Microsemi SoC
文件頁(yè)數(shù): 93/114頁(yè)
文件大?。?/td> 0K
描述: IC FPGA NANO 250K GATES 100-VQFP
標(biāo)準(zhǔn)包裝: 90
系列: ProASIC3 nano
RAM 位總計(jì): 36864
輸入/輸出數(shù): 68
門(mén)數(shù): 250000
電源電壓: 1.425 V ~ 1.575 V
安裝類(lèi)型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 100-TQFP
供應(yīng)商設(shè)備封裝: 100-VQFP(14x14)
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)當(dāng)前第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)
ProASIC3 nano Device Overview
1-2
Revision 11
Security, built into the FPGA fabric, is an inherent component of ProASIC3 nano devices. The flash cells
are located beneath seven metal layers, and many device design and layout techniques have been used
to make invasive attacks extremely difficult. ProASIC3 nano devices, with FlashLock and AES security,
are unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is
protected with industry-standard security, making remote ISP possible. A ProASIC3 nano device
provides the best available security for programmable logic designs.
Single Chip
Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the
configuration data is an inherent part of the FPGA structure, and no external configuration data needs to
be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based ProASIC3 nano
FPGAs do not require system configuration components such as EEPROMs or microcontrollers to load
device configuration data. This reduces bill-of-materials costs and PCB area, and increases security and
system reliability.
Instant On
Microsemi flash-based ProASIC3 nano devices support Level 0 of the Instant On classification standard.
This feature helps in system component initialization, execution of critical tasks before the processor
wakes up, setup and configuration of memory blocks, clock generation, and bus activity management.
The Instant On feature of flash-based ProASIC3 nano devices greatly simplifies total system design and
reduces total system cost, often eliminating the need for CPLDs and clock generation PLLs that are used
for these purposes in a system. In addition, glitches and brownouts in system power will not corrupt the
ProASIC3 nano device's flash configuration, and unlike SRAM-based FPGAs, the device will not have to
be reloaded when system power is restored. This enables the reduction or complete removal of the
configuration PROM, expensive voltage monitor, brownout detection, and clock generator devices from
the PCB design. Flash-based ProASIC3 nano devices simplify total system design and reduce cost and
design risk while increasing system reliability and improving system initialization time.
Firm Errors
Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike
a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the
configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. These
errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a
complete system failure. Firm errors do not exist in the configuration memory of ProASIC3 nano flash-
based FPGAs. Once it is programmed, the flash cell configuration element of ProASIC3 nano FPGAs
cannot be altered by high-energy neutrons and is therefore immune to them. Recoverable (or soft) errors
occur in the user data SRAM of all FPGA devices. These can easily be mitigated by using error detection
and correction (EDAC) circuitry built into the FPGA fabric.
Low Power
Flash-based ProASIC3 nano devices exhibit power characteristics similar to an ASIC, making them an
ideal choice for power-sensitive applications. ProASIC3 nano devices have only a very limited power-on
current surge and no high-current transition period, both of which occur on many FPGAs.
ProASIC3 nano devices also have low dynamic power consumption to further maximize power savings.
Advanced Flash Technology
ProASIC3 nano devices offer many benefits, including nonvolatility and reprogrammability through an
advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design
techniques are used to implement logic and control functions. The combination of fine granularity,
enhanced flexible routing resources, and abundant flash switches allows for very high logic utilization
without compromising device routability or performance. Logic functions within the device are
interconnected through a four-level routing hierarchy.
相關(guān)PDF資料
PDF描述
BR93L46RFJ-WE2 IC EEPROM 1KBIT 2MHZ 8SOP
A3PN250-ZVQG100 IC FPGA NANO 250K GATES 100-VQFP
A3PN250-ZVQ100 IC FPGA NANO 250K GATES 100-VQFP
BR93L46F-WE2 IC EEPROM 1KBIT 2MHZ 8SOP
AGLN030V2-ZCSG81I IC FPGA NANO 1KB 30K 81-CSP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A3PN250-VQ100I 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN250-VQG100 功能描述:IC FPGA NANO 2048MAC 100VQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:60 系列:XP LAB/CLB數(shù):- 邏輯元件/單元數(shù):10000 RAM 位總計(jì):221184 輸入/輸出數(shù):244 門(mén)數(shù):- 電源電壓:1.71 V ~ 3.465 V 安裝類(lèi)型:表面貼裝 工作溫度:0°C ~ 85°C 封裝/外殼:388-BBGA 供應(yīng)商設(shè)備封裝:388-FPBGA(23x23) 其它名稱(chēng):220-1241
A3PN250-VQG100I 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN250-Z1VQ100 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN250-Z1VQ100I 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)