參數(shù)資料
型號(hào)： AAT4900IJS-T1
廠商： Advanced Analog Technology,lnc.
英文描述： Buffered Power Half-Bridge
中文描述： 緩沖功率半橋
文件頁(yè)數(shù)： 8/13頁(yè)
文件大小： 323K
代理商： AAT4900IJS-T1
AAT4900
Buffered Power Half-Bridge
8
4900.2006.05.1.3
Synchronous Buck DC/DC Converter
Application
The losses associated with the AAT4900 high side
switching MOSFET are due to switching losses and
conduction losses. The conduction losses are asso-
ciated with the R
DS(ON)
characteristics of the output
switching device. At the full load condition, assum-
ing continuous conduction mode (CCM), the on
losses can be derived from the following equations.
Eq. 1:
D is the duty cycle.
Eq. 2:
Δ
I is the
peak-to-peak
inductor ripple current.
High Side Switch RMS Current
Eq. 3:
Low Side Switch RMS Current
The low side RMS current is estimated by the fol-
lowing equation.
Eq. 4:
Total Losses
A simplified form of the above results (where the
above descriptions of I
RMS
has been approximated
with I
o
) is given by:
Eq. 5:
Substitution of the I
RMS
equations with I
O
results in
very little error when the inductor ripple current is
20% to 40% of the full load current. The equation
also includes switching and quiescent current loss-
es where t
SW
is approximated at 18 nsec and I
Q
is
the no load quiescent current of the AAT4900.
Quiescent current losses are associated with the
gate drive of the output stage and biasing. Since
the gate drive current varies with frequency and
voltage, the bias current must be checked at the
frequency, voltage, and temperature of operation
with no load attached to the LX node. Once the
above losses have been determined, the maximum
junction temperature can be calculated.
Eq. 6:
Using the above equations, the graph below shows
the current capability for some typical applications
with maximum junction temperatures of 150°C and
120°C. The increase in R
DS(ON)
vs. temperature is
estimated at 3.75m
Ω
for a 10°C increase in junc-
tion temperature.
Step-Down Converter Limits
(F
S
= 1MHz)
0.5
0.75
1
1.25
1.5
1.75
25
35
45
55
65
75
85
Ambient Temperature (
°
°
C)
O
T
JMAX
= 150
°
°
C
V
IN
= 4.2V, V
O
= 2.5V
V
IN
= 5.0V, V
O
= 3.3V
V
IN
= 4.2V, V
O
= 2.5V
V
IN
= 5.0V, V
O
= 3.3V
T
JMAX
= 120
°
°
C
T
J(MAX)
=
P
LOSS
·
Θ
JC
= T
AMB
P
LOSS
+ (t
sw
· F
S
· I
O
+ I
Q
) · V
IN
I
O
2
· (R
DS(ON)H
· V
O
+ R
DS(ON)L
· (V
IN
-V
O
))
V
IN
=
2
12
= + · (1 - D)
I
RMS(LS)
2
12
= + · D
I
RMS(HS)
1
Δ
I =
-
V
O
V
IN
V
O
L · F
S
D =
O
IN
V
V
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AAT4901 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:Buffered Power Full-Bridge
AAT4901IJS-1-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-2-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-3-T1 功能描述:MOSFET Buffered Power Full-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AAT4901IJS-4-T1 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:Buffered Power Full-Bridge
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