參數(shù)資料
型號: ABA-54563-TR1G
英文描述: 3.4 GHz Broadband Silicon RFIC Amplifier
中文描述: 3.4千兆赫寬帶硅射頻放大器
文件頁數(shù): 3/11頁
文件大?。?/td> 119K
代理商: ABA-54563-TR1G
3
Electrical Specifications
T
c
= +25
°
C, Z
o
= 50
, P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp
Power Gain (|S
21
|
2
) f = 200 MHz
f = 2.0 GHz
dB
23
23
21
25
0.2
Gp
Power Gain Flatness, f = 0.1 ~ 2.0 GHz
f = 0.1 ~ 3.4 GHz
dB
0.5
3.0
NF
Noise Figure f = 200 MHz
f = 2.0 GHz
dB
3.6
4.4
4.8
0.08
P1dB
50
Output Power at 1dB Gain Compression f = 200 MHz
f = 2. 0 GHz
dBm
18.0
16.1
0.18
OIP3
Output Third Order Intercept Point f = 200 MHz
f = 2. 0 GHz
dBm
35.0
27.8
0.32
VSWR
in
Input VSWR f = 200 MHz
f = 2.0 GHz
1.20
1.11
0.02
VSWR
out
Output VSWR f = 200 MHz
f = 2.0 GHz
1.20
1.14
0.02
Icc
Device Current
mA
79
90
0.2
Notes:
Measurements taken on 50
test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation
and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere
within the upper and lower spec limits.
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