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參數(shù)資料
| 型號(hào)： | ACS257MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Quad 2-Input Multiplexer with Three-State Outputs(抗輻射四2輸入多換器（三態(tài)輸出）) |
| 中文描述： | 輻射加固四2輸入多路復(fù)用器與三態(tài)輸出（抗輻射四2輸入多換器（三態(tài)輸出）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 48K |
| 代理商： | ACS257MS |
2
Die Characteristics
DIE DIMENSIONS:
Size: 2390
μ
m x 2390
μ
m (94 mils x 94 mils)
Thickness: 525
μ
m
±
25
μ
m (20.6 mils
±
1 mil)
Bond Pad: 110
μ
m x 110
μ
m (4.3 x 4.3 mils)
METALLIZATION:
Al
Metal 1 Thickness: 0.7
μ
m
±
0.1
μ
m
Metal 2 Thickness: 1.0
μ
m
±
0.1
μ
m
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30
μ
m
±
0.15
μ
m
SPECIAL INSTRUCTIONS:
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 10
5
A/cm
2
Transistor Count: 212
Metallization Mask Layout
ACS257MS
1I
0
S
V
CC
OE
1I
1
1Y
2I
0
2I
1
4I
0
4I
1
4Y
3I
0
2Y
GND
3Y
3I
1
ACS257MS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
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| ACS257D | Radiation Hardened Quad 2-Input Multiplexer with Three-State Outputs |
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| ACS257DMSR-02 | Radiation Hardened Quad 2-Input Multiplexer with Three-State Outputs |
| ACS257KMSR-02 | Radiation Hardened Quad 2-Input Multiplexer with Three-State Outputs |
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