- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362073 > ACT-F128K8N-150P4M EEPROM PDF資料下載
參數(shù)資料
| 型號： | ACT-F128K8N-150P4M |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大小： | 153K |
| 代理商： | ACT-F128K8N-150P4M |
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
2
hermetically sealed ceramic packages; a
32 lead .82" x .41" x .125" flat package in
both formed or unformed leads or a 32 pin
1.6"x.60" x.20" DIP package for operation
over the temperature range -55°C to
+125°C
and
military
conditions.
The flash memory is organized as
128Kx8 bits and is designed to be
programmed in-system with the standard
system 5.0V Vcc supply. A 12.0V V
PP
is
not required for write or erase operations.
The device can also be reprogrammed with
standard EPROM programmers (with the
proper socket).
The
standard
ACT–F128K8
access times between 60ns and 150ns,
allowing
operation
microprocessors without wait states. To
eliminate bus contention, the device has
separate chip enable (CE), write enable
(WE) and output enable (OE) controls. The
ACT–F128K8 is command set compatible
with JEDEC standard 1 Mbit EEPROMs.
Commands are written to the command
register using standard microprocessor
write timings. Register contents serve as
input to an internal state-machine which
controls the erase and programming
circuitry. Write cycles also internally latch
addresses and data needed for the
programming and erase operations.
Reading data out of the device is similar
to reading from 12.0V Flash or EPROM
devices. The ACT–F128K8 is programmed
by executing the program command
sequence. This will invoke the Embedded
Program Algorithm which is an internal
algorithm that automatically times the
program pulse widths and verifies proper
cell margin. Typically, each sector can be
programmed and verified in less than 0.3
environmental
offers
of
high-speed
second.
executing the erase command sequence.
This will invoke the Embedded Erase
Algorithm which is an internal algorithm
that automatically preprograms the array, (if
it is not already programmed before)
executing the erase operation. During
erase, the device automatically times the
erase pulse widths and verifies proper cell
margin.
Also the device features a sector erase
architecture. The sector mode allows for
16K byte blocks of memory to be erased
and reprogrammed without affecting other
blocks. The ACT-F128K8 is erased when
shipped from the factory.
The device features single 5.0V power
supply operation for both read and write
functions.
lnternally
regulated voltages are provided for the
program and erase operations. A low V
CC
detector
automatically
operations on the loss of power. The end of
program or erase is detected by Data
Polling of D7 or by the Toggle Bit feature on
D6. Once the end of a program or erase
cycle has been completed, the device
internally resets to the read mode.
All bits of each die, or all bits within a
sector
of
a
die,
Fowler-Nordhiem tunneling. Bytes are
programmed one byte at a time by hot
electron injection.
A DESC Standard Military Drawing
(SMD) number is pending.
Erase
is
accomplished
by
generated
and
inhibits
write
are
erased
via
General Description, Cont’d
,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ACT-F128K8N-150P4Q | EEPROM |
| ACT-F128K8N-150P4T | EEPROM |
| ACT-F512K8-120F3M | x8 Flash EEPROM |
| ACT-F512K8-120P4M | x8 Flash EEPROM |
| ACT-F512K8-150F3M | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ACT-F128K8N-150P4Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACT-F128K8N-150P4T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACTF139 | 制造商:ACT 制造商全稱:Advanced Crystal Technology 功能描述:Designed for use in pager applications |
| ACTF139/139.0/1F11 | 制造商:ACT 制造商全稱:Advanced Crystal Technology 功能描述:Designed for use in pager applications |
| ACTF1459 | 制造商:ACT 制造商全稱:Advanced Crystal Technology 功能描述:low-loss, compact and economical surface-acoustic-wave (SAW) filter |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。