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參數(shù)資料
| 型號(hào)： | ACT-F128K8N-150P4Q |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 153K |
| 代理商： | ACT-F128K8N-150P4Q |
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
13
AC Waveforms for Read Operations
Figure 7
t
OH
t
CE
t
OE
t
ACC
t
RC
t
DF
Output Valid
High Z
High Z
Outputs
OE
WE
CE
Addresses
Addresses Stable
WE
OE
CE
Data
Addresses
5.0V
5555H
PA
Data Polling
PA
D7
D
OUT
PD
AOH
t
WHWH
1
t
OE
t
RC
t
CE
t
DF
t
OH
t
AH
t
AS
t
DH
t
WPH
t
WP
t
DS
t
CE
t
WC
Write/Erase/Program
Operation, WE Controlled
Figure 8
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
t
GHWL
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