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參數資料
| 型號： | ACT-S512K8N-025F16Q |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 367K |
| 代理商： | ACT-S512K8N-025F16Q |
CIRCUIT TECHNOLOGY
www.aeroflex.com
eroflex Circuit Technology - Advanced Multichip Modules SCD1660 REV D 5/21/01
Features
■
4 Low Power CMOS 512K x 8 SRAMs in one MCM
■
Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8
■
Input and Output TTL & CMOS Compatible Design
■
Fast 17,20,25,35,45,55ns Access Times
■
Full Commercial, Industrial and Military (-55°C to +125°C)
Temperature Range
■
MIL-PRF-38534 Compliant MCMs Available
■
+5 V Power Supply
■
Available in two Surface Mount Packages, and two PGA Type Package
●
68–Lead, Low Profile CQFP(F1), 1.56"SQ x .140"max
●
68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max
(.18 max thickness available, contact factory for details)
(Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
●
68–Lead, Single-Cavity CQFP (F18), .94"SQ x .140"max (Drops into the 68
Lead JEDEC .99"SQ CQFJ footprint)
●
66 Pin, 1.38" x 1.38" x .245" PGA Type, Aeroflex code# "P1"
●
66 Pin, 1.09" x 1.09" x .185" PGA Type, With Shoulder, Aeroflex code# "P7"
■
Internal Decoupling Capacitors
■
DESC SMD# 5962–94611 Released (F1,F2,F18,P1,P7)
512Kx8
512Kx8
512Kx8
512Kx8
CE
4
OE
A
0
– A
18
I/O
0-7
I/O
8-15
I/
O
16-23
I/O
24-31
8
8
8
8
CE
3
WE
CE
1
CE
2
Block
Diagram – PGA Type Package (P1,P7) & CQFP (F2,F18)
512Kx8
512Kx8
512Kx8
512Kx8
CE
4
OE
A
0
–
A
18
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
8
8
8
8
CE
3
WE
4
WE
3
WE
2
WE
1
CE
1
CE
2
Block
Diagram – CQFP(F1)
Pin Description
I/O
0-31
Data I/O
A
0–18
Address Inputs
WE
1–4
Write Enables
CE
1–4
Chip Enables
OE
Output Enable
V
cc
Power Supply
GND
Ground
NC
Not Connected
Pin Description
I/O
0-31
Data I/O
A
0–18
Address Inputs
WE
Write Enable
CE
1–4
Chip Enables
OE
Output Enable
V
cc
Power Supply
GND
Ground
NC
Not Connected
General Description
The ACT–S512K32 is a High
Speed, 16 megabit CMOS
SRAM
Multichip
(MCM)
designed
temperature range industrial,
military,
or
memory
and
applications.
Module
for
full
space,
fast
mass
cache
The MCM can be organized
as a 512K x 32 bit, 1M x 16 bit
or 2M x 8 bit device and is
input
and
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs
are low and output enable (OE)
input is high. Reading is
accomplished when WE is high
and CE and OE are both low.
Access time grades of 17ns,
20ns, 25ns, 35ns, 45ns and
55ns maximum are standard
high speed versions.
output
TTL
The +5 Volt power supply
version is standard and +3.3
Volt lower power model is a
future optional product.
The products are designed
for
operation
temperature range of -55°C to
+125°C and under the full
military environment. DESC
Standard
Military
(SMD) numbers are released.
over
the
Drawing
The
ACT-S512K32
in
square
is
manufactured
80,000
MIL-PRF-38534
facility in Plainview, N.Y.
Aeroflex’s
foot
certified
ACT–S512K32 High Speed
16 Megabit SRAM Multichip Module
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