參數(shù)資料
型號(hào)： ACT-SF128K16N-37P3M
廠商： Aeroflex Inc.
英文描述： ACT-SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module
中文描述： 行為SF128K16高速128Kx16的SRAM /閃存多芯片模塊
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 169K
代理商： ACT-SF128K16N-37P3M
2
Aeroflex Circuit Technology
SCD1677 REV A 4/28/98 Plainview NY (516) 694-6700
Absolute Maximum Ratings
Rating
Symbol
T
C
T
STG
V
G
T
L
Range
-55 to +125
-65 to +150
-0.5 to +7
300
Units
°C
°C
V
°C
Case Operating Temperature
Storage Temperature
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
Parameter
Flash Data Retention
Flash Endurance (Write/Erase Cycles)
10 Years
10,000
Normal Operating Conditions
Symbol
V
CC
V
IH
V
IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Minimum
+4.5
+2.2
-0.5
Maximum
+5.5
V
CC
+ 0.3
+0.8
Units
V
V
V
Capacitance
(
V
IN
= 0V, f = 1MHz, T
C
= 25°C
)
Symbol
C
AD
C
OE
F/S C
WE
1,2
F/S C
CE
1,2
F/S C
I
/
O
These parameters are guaranteed by design but not tested
Parameter
A
0
–
A
16
Capacitance
OE Capacitance
F/S Write Enable Capacitance
F/S Chip Enable Capacitance
I/O
0
– I/O
15
Capacitance
Maximum
50
50
20
20
20
Units
pF
pF
pF
pF
pF
DC Characteristics
(V
CC
= 5.0V, V
SS
= 0V, T
C
= -55°C to +125°C, unless otherwise indicated)
Sym
I
LI
V
CC
= Max, V
IN
= 0 to V
CC
FCE = SCE = V
IH
, OE = V
IH,
V
OUT
= 0 to V
CC
Parameter
Input Leakage Current
Conditions
Min
Max Units
10
μA
Output Leakage Current
I
LO
10
μA
SRAM Operating Supply Current x 16 Mode I
CC
x16SCE = V
IL
, OE = V
IH
, f = 5MHz, V
CC
=
Max, FCE = V
IH
FCE = SCE = V
IH
,
OE = V
IH
, f = 5MHz,
V
CC
= Max
I
OL
= 8 mA, V
CC
= 4.5V
I
OH
= -4.0 mA, , V
CC
= 4.5V
FCE = V
IL
, OE = V
IH
, SCE = V
IH
250
mA
Standby Current
I
SB
40
mA
SRAM Output Low Voltage
SRAM Output High Voltage
Flash Vcc Active Current for Read (1)
Flash Vcc Active Current for Program or
Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Low Vcc Lock Out Voltage
Notes: 1) The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The frequency component typically is less
than 2mA/MHz, with OE at V
IH
2) I
CC
active while Embedded Algorithim (program or erase) is in progress 3) DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
V
OL
V
OH
I
CC1
0.4
V
V
2.4
100
mA
I
CC2
FCE = V
IL
, OE = V
IH
, SCE = V
IH
130
mA
V
OL
V
OH
V
LKO
I
OL
= 12 mA, V
CC
= 4.5V, SCE = V
IH
I
OH
= -2.5 mA, , V
CC
= 4.5V, SCE = V
IH
0.85 x V
CC
0.45
V
V
V
3.2
相關(guān)PDF資料
PDF描述
ACT-SF128K16N-37P3T ACT-SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module
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