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參數(shù)資料
| 型號： | ACT-SF512K16N-26P7C |
| 廠商： | Aeroflex Inc. |
| 元件分類： | SRAM |
| 英文描述： | ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module |
| 中文描述： | 行為SF512K16高速512Kx16的SRAM /閃存多芯片模塊 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 168K |
| 代理商： | ACT-SF512K16N-26P7C |
Aeroflex Circuit Technology
SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700
2
Absolute Maximum Ratings
Rating
Symbol
T
C
T
STG
V
G
T
L
Range
-55 to +125
-65 to +150
-0.5 to +7
300
Units
°C
°C
V
°C
Operating Temperature
Storage Temperature
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
Parameter
Flash Data Retention
Flash Endurance (Write/Erase Cycles)
10 Years
10,000
Normal Operating Conditions
Symbol
V
CC
V
IH
V
IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Minimum
+4.5
+2.2
-0.5
Maximum
+5.5
V
CC
+ 0.3
+0.8
Units
V
V
V
Capacitance
(V
IN
= 0V, f = 1MHz, T
C
= 25°C
)
Symbol
C
AD
C
OE
C
WE
1,2
C
CE
1,2
C
I
/
O
These parameters are guaranteed by design but not tested
Parameter
A
0
–
A
18
Capacitance
OE Capacitance
F/S Write Enable Capacitance
F/S Chip Enable Capacitance
I/O
0
– I/O
15
Capacitance
Maximum
50
50
20
20
20
Units
pF
pF
pF
pF
pF
DC Characteristics
(V
CC
= 5.0V, V
SS
= 0V, Tc = -55°C to +125°C, unless otherwise indicated)
Sym
Input Leakage Current
I
LI
Parameter
Conditions
Min
Max Units
10
V
CC
= Max, V
IN
= 0 to V
CC
FCE = SCE = V
IH
, OE = V
IH,
V
OUT
= 0 to V
CC
SCE = V
IL
, OE = V
IH
, f = 5MHz, V
CC
=
Max, FCE = V
IH
FCE = SCE = V
IH
,
OE = V
IH
, f = 5MHz,
V
CC
= Max
I
OL
= 8 mA, V
CC
= Min, FCE = V
IH
I
OH
= -4.0 mA, , V
CC
= Min, FCE = V
IH
FCE = V
IL
, OE = V
IH
, SCE = V
IH
μA
Output Leakage Current
I
LO
10
μA
SRAM Operating Supply Current x 16
Mode
I
CC
x16
260
mA
Standby Current
I
SB
35
mA
SRAM Output Low Voltage
SRAM Output High Voltage
Flash Vcc Active Current for Read (1)
Flash Vcc Active Current for Program
or Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Low Vcc Lock Out Voltage
Notes: 1) The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at V
IH
2) I
CC
active while Embedded Algorithim (program or
erase) is in progress 3) DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
V
OL
V
OH
I
CC1
0.4
V
V
2.4
130
mA
I
CC2
FCE = V
IL
, OE = V
IH
, SCE = V
IH
150
mA
V
OL
V
OH
V
LKO
I
OL
= 8 mA, V
CC
= Min, SCE = V
IH
I
OH
= -2.5 mA, , V
CC
= Min, SCE = V
IH
0.45
V
V
V
0.85 x V
CC
3.2
4.2
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