參數(shù)資料
型號(hào)： ACT-SF512K16N-37F18I
廠商： Aeroflex Inc.
元件分類： SRAM
英文描述： ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
中文描述： 行為SF512K16高速512Kx16的SRAM /閃存多芯片模塊
文件頁數(shù)： 5/11頁
文件大小： 168K
代理商： ACT-SF512K16N-37F18I
Aeroflex Circuit Technology
SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700
5
Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
JEDEC Stand’d
t
AVAV
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
Units
Read Cycle Time
t
RC
ns
Address Access Time
t
AVQV
t
ACC
60
70
90
ns
Chip Enable Access Time
t
ELQV
t
CE
60
70
90
ns
Output Enable to Output Valid
t
GLQV
t
OE
30
35
35
ns
Chip Enable to Output High Z (1)
t
EHQZ
t
DF
20
20
20
ns
Output Enable High to Output High Z(1)
t
GHQZ
t
DF
20
20
20
ns
Output Hold from Address, CE or OE Change, Whichever is First
t
AXQX
t
OH
0
0
0
ns
Note 1. Guaranteed by design, but not tested
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
JEDEC Stand’d
t
AVAC
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
Units
Write Cycle Time
t
WC
ns
Chip Enable Setup Time
t
ELWL
t
CE
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
40
45
45
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
40
45
45
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
45
45
45
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
ns
Duration of Byte Programming Operation
t
WHWH
1
14
TYP
14
TYP
14
TYP
μs
Sector Erase Time
t
WHWH
2
t
GHWL
30
30
30
Sec
Read Recovery Time before Write
0
0
0
μs
Vcc Setup Time
t
VCE
50
50
50
μs
Chip Programming Time
50
50
50
Sec
Chip Enable Hold Time
t
OEH
1
10
10
10
ns
Chip Erase Time
t
WHWH
3
120
120
120
Sec
1. Toggle and Data Polling only.
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
JEDEC Stand’d
t
AVAC
Parameter
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
Units
Write Cycle Time
t
WC
ns
Write Enable Setup Time
t
WLE
L
t
WS
0
0
0
ns
Chip Enable Pulse Width
t
ELEH
t
CP
40
45
45
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
40
45
45
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
45
45
45
ns
Chip Enable Pulse Width High
t
EHEL
t
CPH
20
20
20
ns
Duration of Byte Programming
t
WHWH
1
14
TYP
14
TYP
14
TYP
μs
Sector Erase Time
t
WHWH
2
t
GHEL
30
30
30
Sec
Read Recovery Time
0
0
0
ns
Chip Programming Time
50
50
50
Sec
Chip Erase Time
t
WHWH
3
120
120
120
Sec
相關(guān)PDF資料
PDF描述
ACT-SF512K16N-37F18M ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
ACT-SF512K16N-37F18Q Serial-out shift registers 16-SO 0 to 70
ACT-SF512K16N-37F18T Serial-out shift registers 16-SO 0 to 70
ACT-SF512K16N-37P3C ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
ACT-SF512K16N-37P3M Synchronous 4-Bit Up/Down Binary Counters 16-SOIC 0 to 70
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