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參數(shù)資料
| 型號： | ACT-SF512K16N-39P7M |
| 廠商： | Aeroflex Inc. |
| 元件分類： | SRAM |
| 英文描述： | ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module |
| 中文描述： | 行為SF512K16高速512Kx16的SRAM /閃存多芯片模塊 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 168K |
| 代理商： | ACT-SF512K16N-39P7M |
Aeroflex Circuit Technology
SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700
8
FWE
OE
FCE
Data
Addresses
5.0V
5555H
PA
Data Polling
PA
D7
D
OUT
PD
AOH
t
WHWH
1
t
AH
t
AS
t
DH
t
CPH
t
CP
t
DS
t
WS
t
WC
t
GHWL
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Write/Erase/Program Operation for Flash Memory, FCE Controlled
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