參數(shù)資料
型號: ACT102H-600D
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: AC Thyristor power switch
封裝: ACT102H-600D<SOT96-1 (SO8)|<<http://www.nxp.com/packages/SOT96-1.html<1<Always Pb-free,;
文件頁數(shù): 6/14頁
文件大?。?/td> 181K
代理商: ACT102H-600D
ACT102H-600D
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 23 December 2010
6 of 14
NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
6.
Characteristics
Table 6.
Symbol
I
GT
Characteristics
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 12 mA; T
j
= 25 °C;
see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 0.3 A; see
Figure 10
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C
V
D
= 12 V; I
T
= 100 mA; T
j
125 °C
V
D
= 600 V; T
j
125 °C
V
D
= 600 V; T
j
25 °C
V
DM
= 402 V; T
j
= 125 °C; gate open
circuit; exponential waveform;
see
Figure 11
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 15 V/μs; gate open circuit;
see
Figure 12
; see
Figure 13
Min
0.5
Typ
-
Max
5
Unit
mA
0.5
-
5
mA
I
L
latching current
-
-
25
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
0.15
-
-
300
-
-
-
-
-
-
-
20
1.2
0.9
-
0.2
2
-
mA
V
V
V
mA
μA
V/μs
I
D
off-state current
dV
D
/dt
rate of rise of off-state
voltage
dI
com
/dt
rate of change of
commutating current
0.15
-
-
A/ms
V
CL
clamping voltage
I
CL
= 100 μA; t
p
= 1 ms; T
j
125 °C;
see
Figure 14
650
-
-
V
(1) LD+ G-
(2) LD- G-
Fig 7.
Normalized gate trigger current as a function of
junction temperature
Fig 8.
Normalized latching current as a function of
junction temperature
I
GT
I
GT(25
°
C)
T
j
(
°
C)
50
0
150
100
50
1
2
3
0
003aac809
(1)
(2)
(1)
(2)
T
j
(
°
C)
50
150
100
0
50
003aac811
1
2
3
0
I
L
I
L(25
°
C)
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