AD5260/AD5262
Rev. A | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—20 kΩ, 50 kΩ, 200 kΩ VERSIONS
VDD = +15 V, VSS = 0 V, or VDD = +5 V, VSS = –5 V; VL = +5 V; VA = +5 V, VB = 0 V, 40°C < TA < +85°C, unless otherwise noted.
The AD5260/AD5262 contain 1968 transistors. Die size: 89 mil × 105 mil (9345 sq mil).
Table 1.
Parameter
Symbol
Conditions
Min
Max
Unit
DC CHARACTERISTICS RHEOSTAT MODE
Specifications apply to all VRs
R-DNL
RWB, VA = no connect
1
±
+1
LSB
R-INL
RWB, VA = no connect
1
±
+1
LSB
ΔRAB
TA = 25°C
30
%
Resistance Temperature Coefficient
ΔRAB/ΔT
Wiper = no connect
35
ppm/°C
Wiper Resistance
RW
IW = 1 V/RAB
60
150
Ω
Channel Resistance Matching (AD5262 only)
ΔRWB/RWB
Channel 1 and Channel 2 RWB,
DX = 0x80
0.1
%
Resistance Drift
ΔRAB
0.05
%
DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE
Specifications apply to all VRs
Resolution
N
8
Bits
DNL
1
±1/4
+1
LSB
INL
1
±1/2
+1
LSB
Voltage Divider Temperature Coefficient
ΔVW/ΔT
Code = half scale
5
ppm/°C
Full-Scale Error
WFSE
Code = full scale
2
1
+0
LSB
Zero-Scale Error
VWZSE
Code = zero scale
0
1
2
LSB
RESISTOR TERMINALS
VA, B, W
VSS
VDD
V
Ax and Bx Capacitance6
CA,B
f = 5 MHz, measured to GND,
code = half scale
25
pF
CW
f = 1 MHz, measured to GND,
code = half scale
55
pF
Common-Mode Leakage Current
ICM
VA = VB = VDD/2
1
nA
ISHDN
5
μA
DIGITAL INPUTS and OUTPUTS
Input Logic High
VIH
2.4
V
Input Logic Low
VIL
0.8
V
Input Logic High
VIH
VL = 3 V, VSS = 0 V
2.1
V
Input Logic Low
VIL
VL = 3 V, VSS = 0 V
0.6
V
Output Logic High (SDO)
VOH
RPULL-UP = 2 kΩ to 5 V
4.9
V
Output Logic Low (SDO)
VOL
IOL = 1.6 mA, VLOGIC = 5 V
0.4
V
IIL
VIN = 0 V or 5 V
±1
μA
CIL
5
POWER SUPPLIES
Logic Supply
VL
2.7
5.5
V
Power Single-Supply Range
VDD RANGE
VSS = 0 V
4.5
16.5
V
Power Dual-Supply Range
VDD/SS RANGE
±4.5
±5.5
V
Logic Supply Current
IL
VL = 5 V
60
μA
Positive Supply Current
IDD
VIH = 5 V or VIL = 0 V
1
μA
Negative Supply Current
ISS
VSS= 5 V
1
μA
PDISS
VIH = 5 V or VIL = 0 V,
VDD = +5 V, VSS = –5 V
0.3
mW
Power Supply Sensitivity
PSS
ΔVDD= +5 V, ±10%
0.003
0.01
%/%