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參數(shù)資料
| 型號： | AD645JN |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | Low Noise, Low Drift FET Op Amp |
| 中文描述： | OP-AMP, 1000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 439K |
| 代理商： | AD645JN |
REV. B
–4–
AD645–Typical Characteristics
(@ +25
8
C,
6
15 V unless otherwise noted)
C
√
H
100
1k
10k
100k
1.0
10
100
FREQUENCY – Hz
10
1M
0.1
1
Figure 7. Current Noise Spectral
Density vs. Frequency
1.0
10
100
SOURCE RESISTANCE –
1k
10
9
10
8
10
7
10
6
10
5
10
3
10
4
NOISE BANDWIDTH: 0.1 to 10Hz
I
μ
V
Figure 10. Input Voltage Noise vs.
Source Resistance
0
1
2
3
4
5
WARM-UP TIME – Minutes
C
μ
V
50
25
0
25
–
50
–
T = +25 C
V =
±
15V
Figure 13. Change in Input Offset
Voltage vs. Warmup Time
1k
100
10
0
1
10
100
1k
10k
100k
FREQUENCY – Hz
V
Figure 8. Voltage Noise Spectral
Density vs. Frequency
V
n
√
H
10
15
20
25
5
–
C
√
H
100
10
0.1
0.01
CURRENT NOISE
VOLTAGE NOISE
TEMPERATURE – C
60
0
40
–
20
–
20
40
60
80
100 120 140
fo
1
Figure 11. Voltage and Current
Noise Spectral Density vs.
Temperature
0
1
2
3
4
5
TIME FROM THERMAL SHOCK – Minutes
C
μ
V
150
75
0
150
–
75
–
T
A
= 25
°
C TO T
A
= 85
°
C
Figure 14. Change in Input Offset
Voltage vs. Time from Thermal
Shock
10
100
1k
10k
10
100
1000
FREQUENCY – Hz
1.0
100k
1
0.1
R = 10M
R = 1M
R = 100k
R = 100
V
Figure 9. Voltage Noise Spectral
Density vs. Frequency for Various
Source Resistances
V
√
H
100
1k
10k
100k
1.0
10
100
SOURCE RESISTANCE –
1M
10M
100M
1k
SOURCE
RESISTANCE
NOISE OF AD645
AND RESISTOR
RESISTOR NOISE
ONLY
Figure 12. Voltage Noise Spectral
Density @ 1 kHz vs. Source
Resistance
I
I
60
40
20
0
20
40
60
80
100
120 140
–
–
–
TEMPERATURE – C
10
9
–
10
10
–
10
11
–
10
12
–
10
13
–
10
14
–
10
9
–
10
10
–
10
11
–
10
12
–
10
13
–
10
14
–
INPUT
BIAS
CURRENT
INPUT
OFFSET
CURRENT
Figure 15. Input Bias and Offset
Currents vs. Temperature
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| AD645S | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Low Drift FET Op Amp |
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