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參數(shù)資料
| 型號(hào)： | AD674BBD |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC ADC 12BIT MONO 3OUT 28-CDIP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 位數(shù)： | 12 |
| 采樣率（每秒）： | 66k |
| 數(shù)據(jù)接口： | 并聯(lián) |
| 轉(zhuǎn)換器數(shù)目： | 1 |
| 功率耗散（最大）： | 375mW |
| 電壓電源： | 雙 ± |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 28-CDIP（0.605"，15.37mm） |
| 供應(yīng)商設(shè)備封裝： | 28-CDIP |
| 包裝： | 管件 |
| 輸入數(shù)目和類型： | 2 個(gè)單端，單極；2 個(gè)單端，雙極 |
REV. C
–4–
AD674B/AD774B
TIMING—STAND ALONE MODE (Figures 4a and 4b)
J, K, A, B Grades
T Grade
Parameter
Symbol
Min Typ Max
Min Typ Max Unit
Data Access Time
tDDR
150
ns
Low R/
C Pulsewidth
tHRL
50
ns
STS Delay from R/
C
tDS
200
225
ns
Data Valid After R/
C Low
tHDR
25
ns
STS Delay After Data Valid tHS
30
200
600
30
200 600
ns
High R/
C Pulsewidth
tHRH
150
ns
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
*
VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +16.5 V
VEE to Digital Common . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
VLOGIC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . .
±1 V
Digital Inputs to Digital Common . . . –0.5 V to VLOGIC +0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . VEE to VCC
20 VIN to Analog Common . . . . . . . . . . . . . . . . . . . . . .
±24 V
REF OUT . . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to VCC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 175
°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300
°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
R/
C
STS
DB11–DB0
DATA
VALID
DATA VALID
tHRL
tDS
HIGH–Z
tHS
tHDR
tC
Flgure 4a. Standalone Mode Timing Low Pulse R/
C
R/
C
STS
DB11–DB0
HIGH–Z
DATA
VALID
tHRH
tDS
tDDR
tHDR
tC
tHL
Figure 4b. Standalone Mode Timing High Pulse for R/
C
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD674B/AD774B features proprietary ESD protection circuitry, permanent damage may occur
on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Conversion
INL
Package
Model
l
Temperature
Time (max)
(TMIN to TMAX)
Description
Option
2
AD674BJN
0
°C to 70°C
15
s
±1 LSB
Plastic DIP
N-28
AD674BKN
0
°C to 70°C
15
s
±1/2 LSB
Plastic DIP
N-28
AD674BAR
–40
°C to +85°C
15
s
±1 LSB
Plastic SOIC
R-28
AD674BBR
–40
°C to +85°C
15
s
±1/2 LSB
Plastic SOIC
R-28
AD674BAD
–40
°C to +85°C
15
s
±1 LSB
Ceramic DIP
D-28
AD674BBD
–40
°C to +85°C
15
s
±1/2 LSB
Ceramic DIP
D-28
AD674BTD
–55
°C to +125°C
15
s
±1 LSB
Ceramic DIP
D-28
AD774BJN
0
°C to 70°C8 s
±1 LSB
Plastic DIP
N-28
AD774BKN
0
°C to 70°C8 s
±1/2 LSB
Plastic DIP
N-28
AD774BAR
–40
°C to +85°C8 s
±1 LSB
Plastic SOIC
R-28
AD774BBR
–40
°C to +85°C8 s
±1/2 LSB
Plastic SOIC
R-28
AD774BAD
–40
°C to +85°C8 s
±1 LSB
Ceramic DIP
D-28
AD774BBD
–40
°C to +85°C8 s
±1/2 LSB
Ceramic DIP
D-28
AD774BTD
–55
°C to +125°C8 s
±1 LSB
Ceramic DIP
D-28
NOTES
1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military
Products Databook or the current AD674B/ AD774B/883B data sheet.
2N = Plastic DIP; D = Hermetic DIP; R = Plastic SOIC.
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