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參數(shù)資料
| 型號(hào)： | AD7845BQ |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC DAC 12BIT MULT LC2MOS 24-CDIP |
| 產(chǎn)品培訓(xùn)模塊： | Data Converter Fundamentals DAC Architectures |
| 標(biāo)準(zhǔn)包裝： | 15 |
| 設(shè)置時(shí)間： | 5µs |
| 位數(shù)： | 12 |
| 數(shù)據(jù)接口： | 并聯(lián) |
| 轉(zhuǎn)換器數(shù)目： | 1 |
| 電壓電源： | 雙 ± |
| 功率耗散（最大）： | 150mW |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 24-CDIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 24-CDIP |
| 包裝： | 管件 |
| 輸出數(shù)目和類型： | 1 電壓，單極；1 電壓，雙極 |
| 采樣率（每秒）： | 200k |
AD7845
REV. B
–3–
Limit at TMIN to TMAX
Parameter
(All Versions)
Units
Test Conditions/Comments
tCS
30
ns min
Chip Select to Write Setup Time
tCH
0
ns min
Chip Select to Write Hold Time
tWR
30
ns min
Write Pulsewidth
tDS
80
ns min
Data Setup Time
tDH
0
ns min
Data Hold Time
NOTES
1Guaranteed by design and characterization, not production tested.
Specifications subject to change without notice.
TIMING CHARACTERISTICS1 (V
DD = +15 V,
5%. VSS = –15 V,
5%. VREF = +10 V. AGND = DGND = O V.)
ORDERING GUIDE
1
Relative
Temperature
Accuracy
Package
Model
2
Range
@ +25 C
Option
3
AD7845JN
0
°C to +70°C
±1 LSB
N-24
AD7845KN
0
°C to +70°C
±1/2 LSB
N-24
AD7845JP
0
°C to +70°C
±1 LSB
P-28A
AD7845KP
0
°C to +70°C
±1/2 LSB
P-28A
AD7845JR
0
°C to +70°C
±1 LSB
R-24
AD7845KR
0
°C to +70°C
±1/2 LSB
R-24
AD7845AQ
–40
°C to +85°C
±1 LSB
Q-24
AD7845BQ
–40
°C to +85°C
±1/2 LSB
Q-24
AD7845AR
–40
°C to +85°C
±1 LSB
R-24
AD7845BR
–40
°C to +85°C
±1/2 LSB
R-24
AD7845SQ/883B
–55
°C to +125°C
±1 LSB
Q-24
AD7845TQ/883B
–55
°C to +125°C
±1/2 LSB
Q-24
AD7845SE/883B
–55
°C to +125°C
±1 LSB
E-28A
NOTES
1Analog Devices reserves the right to ship either ceramic (D-24A) or cerdip
(Q-24) hermetic packages.
2To order MIL-STD-883, Class B processed parts, add /883B to part number.
3E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip
Carrier; Q = Cerdip; R = SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7845 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Operating Temperature Range
Commercial (J, K Versions) . . . . . . . . . . . . . 0
°C to +70°C
Industrial (A, B Versions) . . . . . . . . . . . . –40
°C to +85°C
Extended (S, T Versions) . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect device
reliability. Only one Absolute Maximum Rating may be applied at any one time.
2V
OUT may be shorted to AGND provided that the power dissipation of the
package is not exceeded.
CS
WR
DATA
5V
0V
5V
0V
5V
0V
NOTES
1. ALL INPUT SIGNAL RISE AND FALL TIMES MEASURED FROM
10% TO 90% OF +5V. tR = tF = 20ns.
2. TIMING MEASUREMENT REFERENCE LEVEL IS
VIH + VIL
2
tCS
tCH
tWR
tDS
tDH
Figure 1. AD7845 Timing Diagram
ABSOLUTE MAXIMUM RATINGS
1
(TA = +25°C unless otherwise stated)
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17 V
VSS to DGND . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17 V
VREF to AGND . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRFB to AGND . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRA to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRB to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRC to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VOUT to AGND
2
. . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD
Digital Input Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Power Dissipation (Any Package)
To +75
°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Derates above +75
°C . . . . . . . . . . . . . . . . . . . . . 10 mW/°C
WARNING!
ESD SENSITIVE DEVICE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AD7845BR | 制造商:Analog Devices 功能描述:DAC 1-CH R-2R 12-bit 24-Pin SOIC W 制造商:Rochester Electronics LLC 功能描述:12-BIT PARALLEL VOUT DAC, IC - Bulk |
| AD7845BRZ | 功能描述:IC DAC 12BIT MULT LC2MOS 24SOIC RoHS:是 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)模轉(zhuǎn)換器 系列:- 產(chǎn)品培訓(xùn)模塊:Data Converter Fundamentals DAC Architectures 標(biāo)準(zhǔn)包裝:750 系列:- 設(shè)置時(shí)間:7µs 位數(shù):16 數(shù)據(jù)接口:并聯(lián) 轉(zhuǎn)換器數(shù)目:1 電壓電源:雙 ± 功率耗散（最大）:100mW 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:28-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:28-PLCC（11.51x11.51） 包裝:帶卷 (TR) 輸出數(shù)目和類型:1 電壓，單極；1 電壓，雙極 采樣率（每秒）:143k |
| AD7845JN | 功能描述:IC DAC 12BIT MULTIPLYING 24-DIP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)模轉(zhuǎn)換器 系列:- 標(biāo)準(zhǔn)包裝:2,400 系列:- 設(shè)置時(shí)間:- 位數(shù):18 數(shù)據(jù)接口:串行 轉(zhuǎn)換器數(shù)目:3 電壓電源:模擬和數(shù)字 功率耗散（最大）:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:36-TFBGA 供應(yīng)商設(shè)備封裝:36-TFBGA 包裝:帶卷 (TR) 輸出數(shù)目和類型:* 采樣率（每秒）:* |
| AD7845JN | 制造商:Analog Devices 功能描述:SEMICONDUCTORSLINEAR |
| AD7845JNZ | 功能描述:IC DAC 12BIT MULT LC2MOS 24-DIP RoHS:是 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)模轉(zhuǎn)換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:50 系列:- 設(shè)置時(shí)間:4µs 位數(shù):12 數(shù)據(jù)接口:串行 轉(zhuǎn)換器數(shù)目:2 電壓電源:單電源 功率耗散（最大）:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-uMAX 包裝:管件 輸出數(shù)目和類型:2 電壓，單極 采樣率（每秒）:* 產(chǎn)品目錄頁(yè)面:1398 (CN2011-ZH PDF) |
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