AD7886
–3–
REV. B
TIMING CHARACTERISTICS
1
(VDD = +5 V
5%, VSS = –5 V
5%, AGND = DGND = 0 V)
Limit at
TMIN, TMAX
Parameter
(J, K Versions)
(B Version)
(T Version)
Units
Conditions/Comments
t1
50
ns min
CONVST Pulse Width
1
Fs max
t2
0
ns min
CS to RD Setup Time
t3
0
ns min
CS to RD Hold Time
t4
60
75
ns min
RD Pulse Width
t5
100
ns max
CONVST to BUSY Propagation Delay, (CL = 10 pF)
t6
57
70
ns max Data Access Time After
RD
t7
3
10
ns min Bus Relinquish Time After
RD
50
60
ns max
t8
20
14
ns min Data Setup Time Prior to
BUSY, (CL = 20 pF)
10
0
ns min Data Setup Time Prior to
BUSY, (CL = 100 pF)
t9
3
10
ns min Bus Relinquish Time After
CONVST
100
ns max
t10
0
ns min
CS High to CONVST Low
t11
0
ns min
BUSY High to RD Low
t12
250
ns typ
BUSY High to CONVST Low, SHA Acquisition Time
t13
1.333
s min Sampling Interval
tCONV
950
ns typ
Conversion Time
1000
ns max
NOTES
1Timing specifications in bold print are 100% production tested. All other times are sample tested at +25
°C to ensure compliance. All input signals are specified with tr =
tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2t
6 is measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.
3t
7 and t9 are derived from the measured time taken by the data outputs to change by 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapo-
lated back to remove the effects of charging or discharging the load capacitor, CL. This means that the times, t7 and t9, quoted in the timing characteristics are the true bus
relinquish times of the part and as such are independent of external bus loading capacitances.
Specifications subject to change without notice.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7886 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
TO OUTPUT
PIN
+2.1V
IOH
I
OL
C
L
Figure 1. Load Circuit for Bus Access and Relinquish Time
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA= +25
°C unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VSS to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
VIN1, VIN2, SUM, +5REF to AGND . . . . . . –15 V to +15 V
VREF to AGND . . . . . . . . . . . . . . . . VSS –0.3 V to VDD +0.3 V
Digital Inputs to DGND
CS, RD, CONVST . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
Digital Outputs to DGND
DB0 to DB11, BUSY . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
Operating Temperature Range
Commercial (J, K Versions) . . . . . . . . . . . . . . 0
°C to +70°C
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to + 150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300
°C
Power Dissipation (Any Package) to +75
°C . . . . . . 1000 mW
Derates above +75
°C by . . . . . . . . . . . . . . . . . . . . 10 mW/°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2If V
SS is open circuited with VDD and AGND applied, the VSS pin will be pulled
positive, exceeding the Absolute Maximum Ratings. If this possibility exists, a
Schottky diode from VSS to DGND (cathode end to GND) ensures that the