Internal Power Dissipation (at T<" />
參數(shù)資料
型號: AD795JRZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 16/20頁
文件大小: 0K
描述: IC OPAMP JFET 1.6MHZ LN 8SOIC
標準包裝: 2,500
放大器類型: J-FET
電路數(shù): 1
轉(zhuǎn)換速率: 1 V/µs
-3db帶寬: 1.6MHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 100µV
電流 - 電源: 1.3mA
電流 - 輸出 / 通道: 10mA
電壓 - 電源,單路/雙路(±): 8 V ~ 36 V,±4 V ~ 18 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
AD795
Rev. C | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage
±18 V
Internal Power Dissipation (at TA = +25°C)
SOIC Package
500 mW
Input Voltage
±VS
Input Current1
±10 mA
Output Short-Circuit Duration
Indefinite
Differential Input Voltage
+VS and VS
Storage Temperature Range (R)
65°C to +125°C
Operating Temperature Range
AD795J
0°C to +70°C
1 Limit input current to 10 mA or less whenever the input signal exceeds the
power supply rail by 0.1 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered on a 4-layer circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
θJA
Unit
8-Lead SOIC
155
°C/W
ESD CAUTION
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AD795JRZ-REEL7 功能描述:IC OPAMP JFET 1.6MHZ LN 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:73 系列:Over-The-Top® 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.07 V/µs 增益帶寬積:200kHz -3db帶寬:- 電流 - 輸入偏壓:1nA 電壓 - 輸入偏移:285µV 電流 - 電源:50µA 電流 - 輸出 / 通道:25mA 電壓 - 電源,單路/雙路(±):2 V ~ 44 V,±1 V ~ 22 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:16-DFN-EP(5x3) 包裝:管件
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