參數(shù)資料
型號: AD8001ARZ
廠商: Analog Devices Inc
文件頁數(shù): 12/17頁
文件大?。?/td> 0K
描述: IC OPAMP CF LP LDIST 70MA 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 電流反饋
電路數(shù): 1
轉(zhuǎn)換速率: 1200 V/µs
-3db帶寬: 715MHz
電流 - 輸入偏壓: 5µA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 5mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): ±3 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁面: 769 (CN2011-ZH PDF)
REV. D
AD8001
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation @ 25
°C2
PDIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
8-Lead CERDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short Circuit Duration
.. . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . – 40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead PDIP Package:
θ
JA = 90
°C/W
8-Lead SOIC Package:
θ
JA = 155
°C/W
8-Lead CERDIP Package:
θ
JA = 110
°C/W
5-Lead SOT-23-5 Package:
θ
JA = 260
°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8001 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150
°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175
°C for an extended
period can result in device failure.
While the AD8001 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150
°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
0
–50
80
1.5
0.5
–40
1.0
010
–10
–20
–30
20
30
40
50
60
70
90
AMBIENT TEMPERATURE – C
MAXIMUM
POWER
DISSIPATION
W
8-LEAD
PDIP PACKAGE
TJ = +150 C
5-LEAD
SOT-23-5 PACKAGE
8-LEAD
SOIC PACKAGE
8-LEAD
CERDIP PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8001 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
Branding
AD8001AN
–40
°C to +85°C
8-Lead PDIP
N-8
AD8001AQ
–55
°C to +125°C
8-Lead CERDIP
Q-8
AD8001AR
–40
°C to +85°C
8-Lead SOIC
R-8
AD8001AR-REEL
–40
°C to +85°C
13" Tape and REEL
R-8
AD8001AR-REEL7
–40
°C to +85°C
7" Tape and REEL
R-8
AD8001ART-REEL
–40
°C to +85°C
13" Tape and REEL
RT-5
HEA
AD8001ART-REEL7
–40
°C to +85°C
7" Tape and REEL
RT-5
HEA
AD8001ACHIPS
–40
°C to +85°CDie Form
5962-9459301MPA
*
–55
°C to +125°C
8-Lead CERDIP
Q-8
*Standard Military Drawing Device.
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