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| 型號： | AD8002ARZ-RL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 16/21頁 |
| 文件大小： | 0K |
| 描述： | IC OPAMP CF DUAL LP LDIST 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 放大器類型： | 電流反饋 |
| 電路數(shù)： | 2 |
| 轉(zhuǎn)換速率： | 1200 V/µs |
| -3db帶寬： | 600MHz |
| 電流 - 輸入偏壓： | 5µA |
| 電壓 - 輸入偏移： | 2000µV |
| 電流 - 電源： | 10mA |
| 電流 - 輸出 / 通道： | 70mA |
| 電壓 - 電源，單路/雙路(±)： | ±3 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
REV. D
AD8002
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
SOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R, RM . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . – 40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic DIP Package:
θ
JA = 90
°C/W
8-Lead SOIC Package:
θ
JA = 155
°C/W
8-Lead
SOIC Package: θ
JA = 200
°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150
°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175
°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150
°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
0
–50
80
1.5
0.5
–40
1.0
010
–10
–20
–30
20
30
40
50
60
70
90
MAXIMUM
POWER
DISSIPATION
–
W
AMBIENT TEMPERATURE – C
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
8-LEAD
SOIC
PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
Brand Code
AD8002AN
–40
°C to +85°C
8-Lead PDIP
N-8
Standard
AD8002AR
–40
°C to +85°C
8-Lead SOIC
SO-8
Standard
AD8002AR-REEL
–40
°C to +85°C
8-Lead SOIC 13" REEL
SO-8
Standard
AD8002AR-REEL7
–40
°C to +85°C
8-Lead SOIC 7" REEL
SO-8
Standard
AD8002ARM
–40
°C to +85°C
8-Lead
SOIC
RM-8
HFA
AD8002ARM-REEL
–40
°C to +85°C
8-Lead
SOIC 13" REEL
RM-8
HFA
AD8002ARM-REEL7
–40
°C to +85°C
8-Lead
SOIC 7" REEL
RM-8
HFA
WARNING!
ESD SENSITIVE DEVICE
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