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| 型號(hào)： | AD8010ARZ-16-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP CF 200MA LP 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 400 |
| 放大器類(lèi)型： | 電流反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 800 V/µs |
| -3db帶寬： | 230MHz |
| 電流 - 輸入偏壓： | 10µA |
| 電壓 - 輸入偏移： | 5000µV |
| 電流 - 電源： | 15.5mA |
| 電流 - 輸出 / 通道： | 200mA |
| 電壓 - 電源，單路/雙路(±)： | 9 V ~ 12 V，±4.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
AD8010
–3–
REV. B
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Plastic Package (N) . . . . . . Observe Power Derating Curves
Small Outline Package (R) . Observe Power Derating Curves
Wide Body SOIC (R-16) . . . Observe Power Derating Curves
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . .
–40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic Package:
θJA = 90°C/W
8-Lead SOIC Package:
θJA = 122°C/W
16-Lead SOIC Package:
θJA = 73°C/W
AMBIENT TEMPERATURE – C
3.0
2.5
0
–50
MAXIMUM
POWER
DISSIPATION
–
Watts
2.0
1.5
1.0
0.5
–40 –30 –20 –10
0
10
20
30
40
5060708090
8-LEAD SOIC PACKAGE
8-LEAD MINI-DIP PACKAGE
16-LEAD SOIC
PACKAGE (WIDEBODY)
TJ = 150 C
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8010 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Options
AD8010AN
–40
°C to +85°C
8-Lead Plastic DIP
N-8
AD8010AR
–40
°C to +85°C
8-Lead Plastic SOIC
SO-8
AD8010AR-16
–40
°C to +85°C
16-Lead Wide Body SOIC
R-16
AD8010AR-REEL
REEL SOIC
13" REEL
AD8010AR-REEL7
REEL SOIC
7" REEL
AD8010AR-16-REEL
REEL SOIC
13" REEL
AD8010AR-16-REEL7
REEL SOIC
7" REEL
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150
°C. Temporarily exceeding
this limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175
°C for an extended period
can result in device failure.
While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150
°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
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