Data Sheet AD8057/AD8058 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Vol" />
參數(shù)資料
型號: AD8057AR-REEL
廠商: Analog Devices Inc
文件頁數(shù): 12/16頁
文件大小: 0K
描述: IC OPAMP VF LN LP LDIST 8SOIC
標準包裝: 2,500
放大器類型: 電壓反饋
電路數(shù): 1
轉換速率: 1150 V/µs
-3db帶寬: 325MHz
電流 - 輸入偏壓: 500nA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 6mA
電壓 - 電源,單路/雙路(±): 3 V ~ 12 V,±1.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SO
包裝: 帶卷 (TR)
Data Sheet
AD8057/AD8058
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage (+VS to –VS)
12.6 V
Internal Power Dissipation1
SOIC Package (R)
0.8 W
SOT-23-5 Package (RT)
0.5 W
MSOP Package (RM)
0.6 W
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±4.0 V
Output Short-Circuit Duration
Observe power
derating curves
Storage Temperature Range (R)
65°C to +125°C
Operating Temperature Range (A Grade)
40°C to +85°C
Lead Temperature (Soldering 10sec)
300°C
1
Specification is for device in free air:
8-lead SOIC package: θJA = 160°C/W
5-lead SOT-23-5 package: θJA = 240°C/W
8-Lead MSOP package: θJA = 200°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8057/AD8058 is limited by the associated rise in junction
temperature. Exceeding a junction temperature of 175°C for
an extended period can result in device failure. Although the
AD8057/AD8058 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction temper-
ature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
–50 –40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
1.0
0.5
TJ = 150°C
8-LEAD SOIC
8-LEAD MSOP
SOT-23-5
01064-
005
Figure 5. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. E | Page 5 of 16
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