參數(shù)資料
型號: AD8065ARTZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 16/29頁
文件大?。?/td> 0K
描述: IC OPAMP VF R-R LN LP SOT23-5
設計資源: Unipolar, Precision DC Digital-to-Analog Conversion Using AD5426/32/43 8-Bit to12-Bit DACs (CN0034)
Programmable Gain Element Using AD5426/32/43 Current Output DACs (CN0038)
Programmable Gain Element Using AD5450/1/2/3 Current Output DAC Family (CN0055)
標準包裝: 1
系列: FastFET™
放大器類型: 電壓反饋
電路數(shù): 1
輸出類型: 滿擺幅
轉換速率: 180 V/µs
-3db帶寬: 145MHz
電流 - 輸入偏壓: 3pA
電壓 - 輸入偏移: 400µV
電流 - 電源: 6.6mA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 5 V ~ 24 V,±2.5 V ~ 12 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: SC-74A,SOT-753
供應商設備封裝: SOT-23-5
包裝: 標準包裝
產(chǎn)品目錄頁面: 770 (CN2011-ZH PDF)
其它名稱: AD8065ARTZ-REEL7DKR
AD8065/AD8066
Rev. J | Page 22 of 28
THERMAL CONSIDERATIONS
INPUT AND OUTPUT OVERLOAD BEHAVIOR
With 24 V power supplies and 6.5 mA quiescent current, the
AD8065 dissipates 156 mW with no load. The AD8066 dissipates
312 mW. This can lead to noticeable thermal effects, especially
in the small SOT-23-5 (thermal resistance of 160°C/W). VOS
temperature drift is trimmed to guarantee a maximum drift of
17 μV/°C, so it can change up to 0.425 mV due to warm-up
effects for an AD8065/AD8066 in a SOT-23-5 package on 24 V.
A simplified schematic of the AD8065/AD8066 input stage is
shown in Figure 56. This shows the cascoded N-channel JFET
input pair, the ESD and other protection diodes, and the
auxiliary NPN input stage that eliminates any phase inversion
behavior. When the common-mode input voltage to the amplifier
is driven to within approximately 3 V of the positive power supply,
the input JFET’s bias current turns off and the bias of the NPN
pair turns on, taking over control of the amplifier. The NPN
differential pair now sets the amplifier’s offset, and the input
bias current is now in the range of several tens of microamps.
This behavior is shown in Figure 32. Normal operation resumes
when the common-mode voltage goes below the 3 V from the
positive supply threshold.
Ib increases by a factor of 1.7 for every 10°C rise in temperature.
Ib is close to five times higher at 24 V supplies as opposed to a
single 5 V supply.
Heavy loads increase power dissipation and raise the chip
junction temperature as described in the Maximum Power
Dissipation section. Care should be taken not to exceed the
rated power dissipation of the package.
The output transistors of the rail-to-rail output stage have
circuitry to limit the extent of their saturation when the output
is overdriven. This helps output recovery time. Output recovery
from a 0.5 V output overdrive on a ±5 V supply is shown in
VTHRESHOLD
VBIAS
S
VP
TO REST OF AMP
VCC
S
VN
R1
Q2
Q5
Q3
Q1
Q6
Q7
Q4
R5
D1
R6
R3
R4
R2
R8
R7
D2
D3
D4
–VEE
IT1
IT2
02916-E
-056
Figure 56. Simplified Input Stage
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