- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄5299 > AD8065ARZ-REEL7 (Analog Devices Inc)IC OPAMP VF R-R LN LP 30MA 8SOIC PDF資料下載
參數(shù)資料
| 型號： | AD8065ARZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 2/29頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP VF R-R LN LP 30MA 8SOIC |
| 設(shè)計資源： | Unipolar, Precision DC Digital-to-Analog Conversion Using AD5426/32/43 8-Bit to12-Bit DACs (CN0034) Programmable Gain Element Using AD5426/32/43 Current Output DACs (CN0038) Programmable Gain Element Using AD5450/1/2/3 Current Output DAC Family (CN0055) |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 系列： | FastFET™ |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 180 V/µs |
| -3db帶寬： | 145MHz |
| 電流 - 輸入偏壓： | 3pA |
| 電壓 - 輸入偏移： | 400µV |
| 電流 - 電源： | 6.6mA |
| 電流 - 輸出 / 通道： | 30mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 24 V，±2.5 V ~ 12 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
AD8065/AD8066
Rev. J | Page 9 of 28
ABSOLUTE MAXIMUM RATINGS
RMS output voltages should be considered. If RL is referenced to
VS, as in single-supply operation, then the total drive power is
VS × IOUT.
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
See Figure 3
Common-Mode Input Voltage
VEE 0.5 V to VCC + 0.5 V
Differential Input Voltage
1.8 V
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
AD8065WARTZ Only
40°C to +105°C
Lead Temperature
(Soldering, 10 sec)
300°C
If the rms signal levels are indeterminate, then consider the
worst case, when VOUT = VS/4 for RL to midsupply.
() ()
L
S
D
R
V
I
V
P
2
4
/
+
×
=
In single-supply operation with RL referenced to VS, worst case
is VOUT = VS/2.
M
A
XIM
U
M
POWER
D
ISSIPA
TION
(
W
)
0
0.5
1.0
1.5
2.0
20
0
–40
–20
–60
40
60
80
100
AMBIENT TEMPERATURE (°C)
02916-E
-003
MSOP-8
SOIC-8
SOT-23-5
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8065/AD8066
packages is limited by the associated rise in junction temperature
(TJ) on the die. The plastic encapsulating the die locally reaches
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8065/AD8066.
Exceeding a junction temperature of 175°C for an extended
time can result in changes in the silicon devices, potentially
causing failure.
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
Airflow increases heat dissipation, effectively reducing θJA. Also,
more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes reduce
the θJA. Care must be taken to minimize parasitic capacitances
at the input leads of high speed op amps as discussed in the
The still air thermal properties of the package and PCB (θJA),
ambient temperature (TA), and total power dissipated in the
package (PD) determine the junction temperature of the die.
The junction temperature can be calculated by
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOIC (125°C/W),
SOT-23 (180°C/W), and MSOP (150°C/W) packages on a
JEDEC standard 4-layer board. θJA values are approximations.
TJ = TA + (PD × θJA)
OUTPUT SHORT CIRCUIT
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, then the total drive power is VS /2 × IOUT, some of
which is dissipated in the package and some in the load (VOUT ×
IOUT). The difference between the total drive power and the load
power is the drive power dissipated in the package.
Shorting the output to ground or drawing excessive current for
the AD8065/AD8066 will likely cause catastrophic failure.
ESD CAUTION
(
)
Power
Load
Power
Drive
Total
Power
Quiescent
PD
+
=
()
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
×
+
×
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 0459844221 | CONN RCPT R/A 4PWR 16SGL 3.18MM |
| 2060.0006.11 | FUSE 250MA 125V SMD FAST |
| OP193FSZ-REEL7 | IC OPAMP GP 35KHZ PREC 8SOIC |
| 2070.0021.11 | FUSE OSU 250V 3.15A |
| AD8034ARZ-REEL7 | IC OPAMP VF R-R DUAL LN LP 8SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AD8065WARTZ-R7 | 功能描述:IC OPAMP VF R-R LN LP SOT23-5 RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類型:通用 電路數(shù):2 輸出類型:滿擺幅 轉(zhuǎn)換速率:1.8 V/µs 增益帶寬積:6.5MHz -3db帶寬:4.5MHz 電流 - 輸入偏壓:5nA 電壓 - 輸入偏移:100µV 電流 - 電源:65µA 電流 - 輸出 / 通道:35mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:10-TFSOP，10-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:10-MSOP 包裝:管件 |
| AD8066AR | 功能描述:IC OPAMP VF R-R DUAL LN LP 8SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類型:J-FET 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:13 V/µs 增益帶寬積:3MHz -3db帶寬:- 電流 - 輸入偏壓:65pA 電壓 - 輸入偏移:3000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:-40°C ~ 85°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 |
| AD8066AR-EBZ | 功能描述:BOARD EVAL FOR AD8066AR RoHS:是 類別:編程器，開發(fā)系統(tǒng) >> 評估板 - 運算放大器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- |
| AD8066ARM | 功能描述:IC OPAMP VF R-R DUAL LN LP 8MSOP RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:FastFET™ 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類型:J-FET 電路數(shù):2 輸出類型:- 轉(zhuǎn)換速率:13 V/µs 增益帶寬積:3MHz -3db帶寬:- 電流 - 輸入偏壓:65pA 電壓 - 輸入偏移:3000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:-40°C ~ 85°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 |
| AD8066ARM-EBZ | 功能描述:BOARD EVAL FOR AD8066ARM RoHS:是 類別:編程器，開發(fā)系統(tǒng) >> 評估板 - 運算放大器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。